In
many applications of copper in industry and research, copper
migration and degradation of metallic copper to its oxides is a common
problem. There are numerous ways to overcome this degradation with
varying success. Atomic layer deposition (ALD) based encapsulation
and passivation of the metallic copper recently emerged as a serious
route to success owing to the conformality and density of the ALD
films. So far, the majority of the studies have been focused on corrosion
protection of copper in a variety of chemical environments, mostly
at ambient temperature. An investigation of the stability of the ALD
film stacks and copper’s interaction with them at elevated
temperatures has been lacking. Here, we study the mitigation of copper
oxidation and migration in 50 nm thick Al2O3/TiO2 and Al2O3/SiO2 bilayer
ALD stacks. First, the corrosion dynamics were investigated via in situ X-ray diffraction (XRD) at 350 °C under
atmospheric conditions, and second, the interaction of copper with
the passivation layers have been examined post factum using detailed spectro-microscopic investigations. According to
the XRD results, both ALD films exhibited excellent oxidation protection.
In contrast, bare Cu immediately started to oxidize at 350 °C
and transformed entirely to its known oxide phases in 4 h. Spectro-microscopic
studies revealed that there are structural and chemical changes on
the top surface and within the film stacks. The TiO2 layer
was crystallized during annealing, while the SiO2 layer
stayed in the amorphous phase, which was analyzed by grazing incidence
XRD and transmission electron microscopy. According to scanning electron
microscopy and X-ray photoelectron spectroscopy analysis, copper was
detected on the surface with a higher amount in Al2O3/TiO2 than Al2O3/SiO2, 5.2 at.% and 0.7 at.%, respectively. Based on the surface
and cross-sectional analysis, copper migration was observed on both
layers, albeit more substantially in Al2O3/TiO2. In the case of Al2O3/SiO2, the bulk of the copper was captured at the interface of the two
oxides.