Chemical conversion of Si to SiC by solid source MBE and RTCVD

Pezoldt, Jörg; Cimalla, V.; Stauden, Thomas; Ecke, G.; Eichhorn, G.; Scharmann, F.; Schipanski, D.

doi:10.1016/s0925-9635(97)00087-3

Cited by 18 publications

(12 citation statements)

References 10 publications

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“…SiC dots were grown supplying only carbon in a solid source molecular beam epitaxy [12,13]. The grain size and the morphology were determined by tapping mode AFM (DI Nanoscope) with an etched single crystal Si tip.…”

Section: Methodsmentioning

confidence: 99%

Lateral alignment of SiC dots on Si

Cimalla

Pezoldt

Stauden

et al. 2004

phys. stat. sol. (c)

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An alignment of self-assembled SiC dots grown by molecular beam epitaxy on Si substrates is demonstrated. Atomic force microscopy was applied showing the possibility to control the lateral ordering in linear chains and in dense dot arrays. The large lattice mismatch between Si and SiC of 20% stimulates a three-dimensional nucleation on the substrate. The formation of well ordered monoatomic, and biatomic steps as well as step bands on (100) and (111) Si was used, offering the advantage to not need additional processing steps to define the alignment. However, during the SiC nucleation on Si the substrate participates in the reaction to SiC by lateral Si diffusion resulting in an unstable surface during the growth. Thus, the reproducible control of the nucleation sites independent on the movement of the steps during the growth is a critical issue to achieve the lateral alignment.

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Section: Methodsmentioning

confidence: 99%

Lateral alignment of SiC dots on Si

Cimalla

Pezoldt

Stauden

et al. 2004

phys. stat. sol. (c)

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“…After transferring the wafer into the reaction chamber an annealing step at 780 C for 1 h was employed. Subsequently, the wafer was cooled down to 325 C and held at this temperature for 1 h. The deposition procedure was similar to the method reported in [39] and consists of the following process steps: 1. silicon wafer cleaning, described in detail in [40], 2. 0-4 ML Ge deposition on the 7 Â 7 reconstructed Si surface at 325 C by electron beam evaporation, 3.…”

Section: Methodsmentioning

confidence: 99%

Elasticity-Based Approach of Interfaces: Application to Heteroepitaxy and Hetero-Systems

Masri¹,

Stauden²,

Pezoldt³

et al. 2001

phys. stat. sol. (a)

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In this paper, we discuss the validity of the S-correlated theory of misfit-induced interface superstructures (MIIS) and nucleation centers for misfit dislocation network (NCMDN) by comparing its results with (i) those obtained by a fully self-consistent numerical approach and (ii) available experimental results. Two main properties play an important role in the theory. The first one is the strain related S factor, which is the ratio of a linear function of the elastic constants over the material atomic density: this factor can be identified from the standard equations of the elasticity theory which, in our approach, represents the basic background. This implies a realistic lattice dynamics model which enables to interpret the velocity of longitudinal, transverse and shear vibrational waves in solids. The second property, n S , is a geometrical parameter related to the extension of MIIS and to the lattice spacing of misfit dislocation network (MDN). We then apply this theory to several hetero-systems and we demonstrate that it can be used to optimize heterointerfaces between host materials characterized by large lattice mismatch. P. Masri et al.: Elasticity-Based Approach of Interfaces: Application to Hetero-Systems Fig. 6. Schematic representation of the unit cell associated with the Al/Si (110) (3 Â 8) super-superstructure

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“…At this point the transport conditions on Si(111) changes drastically and the Si surface diffusion increases. 46 The lower cluster density at the low-temperature region compared to the high-temperature region can be also supported by the fact that the (7 × 7) surface structure appears to have lower reactivity for the cluster formation, which may happen due to the following reasons: -The (7 × 7) surface represents a complicated structure with the small (1 × 1) triangular cells separated by the dimer-row domain walls and holes at the corners of the cell. 134 Such a surface is less convenient for the cluster residence because of the inappropriate Si adatoms.…”

Section: Nucleationmentioning

confidence: 99%

“…The critical step is the initial formation of a well designed SiC layer by interaction of a carbon precursor with the silicon surface avoiding multiple nanoclusters or three dimensional nucleation and growth. [37][38] Once the formation conditions are understood the nucleation density and size, [39][40][41][42] nuclei ordering, 43 44 crystalline structure [45][46][47] and morphology 38 48-50 can be controlled. Secondly, epitaxial layers with desired surface morphology, 51 interface properties, 52 53 polarity [54][55][56] and residual stress [57][58][59][60][61] in this highly mismatched heteroepitaxial system can be designed.…”

Section: Introductionmentioning

confidence: 99%

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Pezoldt¹,

Kulikov²,

Kharlamov³

et al. 2012

Jnl of Comp & Theo Nano

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The main obstacle of implementing numerical simulations for the prediction of nucleation and epitaxial growth is the variety of physical processes with a considerable difference in time and spatial scales. During the growth of nanostructures and epitaxy deposition of atoms, surface and bulk diffusion, nucleation of two-dimensional and three-dimensional clusters, transitions from two dimensional to three dimensional growth, stress relaxation occur. Thus, it is challenging to describe all of them in the framework of a single physical model. In the present work a multi-scale simulation of the epitaxial growth of silicon carbide nanostructures on silicon using three numerical methods, namely Molecular Dynamics, kinetic Monte Carlo, and the Rate Equations was implemented. Molecular Dynamics was used for the estimation of kinetic parameters of atoms and stress fields at the surface, which are input parameters for the other simulation methods. Kinetic Monte Carlo simulations allowed investigating basic nucleation processes and the transition from two dimensional nucleation to three dimensional cluster growth as well as the ordering of nanoclusters. Furthermore the influence of impurities on the nucleation of nanoscale SiC was studied. The energy barriers values obtained in Molecular Dynamics and the physical model used in the rate equation simulations was validated by Kinetic Monte Carlo. The Rate Equation simulation allowed studying the growth process at larger time scales taking into account the surface stress fields. As a result, a full time scale description spanning over a large substrate area of the morphological and structural surface evolution during SiC formation on Si was developed.

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Chemical conversion of Si to SiC by solid source MBE and RTCVD

Cited by 18 publications

References 10 publications

Lateral alignment of SiC dots on Si

Lateral alignment of SiC dots on Si

Elasticity-Based Approach of Interfaces: Application to Heteroepitaxy and Hetero-Systems

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

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