Chemical compatibility of titanium carbide with aluminum, gallium, and indium melts

Properties of Titanium Zirconium Molybdenum Alloy after Exposure to Indium at Elevated Temperatures

“…Review of the samples post run, the In had formed into a single drop having a surface which was dark grey, similar to the color of TiC and ZrC powder. The droplet was sur-rounded by and in contact with TiC and ZrC powder which reveals a non-wetting behavior which is described in literature for In and TiC [ 28 ]. These observations indicate that In was in contact with the carbides during the run, however, they separated despite being intermixed pre run.…”

“…Upon removal of the reference In-Al 2 O 3 background signal from the In-carbide traces, no statistically significant deviations or peaks can be identified. The finding for non-interaction of In with TiC is supported by Kononnako et al who suggested that TiC is resistant to In up to 847 °C based on the contact angle [ 28 ].…”

“…Literature also does not provide significant insight into the interactions between In and zirconium carbide (ZrC) or titanium carbide (TiC) other than suggesting a poor wettability of TiC by In up to 847 °C [ 28 ].…”

Flux-assisted wetting and spreading of Al on TiC

“…An early study of this system was made by Rhee [4] in which wetting (θ < 90 • ) was seen to occur at 747 • C, after 30 min contact time, and no interfacial reactions were reported. A non-wetting to wetting transition was found at 1050 • C by Kononenko et al [5], whereas Samsonov [6] reported contact angles of 148 • at 1100 • C and 60 • at 1200 • C. More recently, the same transition was detected above 860 • C [7,8] and below 800 • C [9] along with the formation of Al 4 C 3 at the solid/liquid interface. The time and temperature dependence suggests that wetting in the Al-TiC system is driven by chemical reaction.…”

“…The spreading of the droplet to a perfect wetting condition, in the presence of a flux, suggests that for clean, oxide-free Al and TiC surfaces, the contact angle is significantly lower than those reported using conventional sessile droplet methods, or it is achieved much more rapidly [4][5][6][7][8][9]. It is postulated that whilst high temperatures and very low oxygen partial pressures are effective in removing the oxide film from the surface of the Al droplet, these conditions are not always achieved or maintained, accounting for the variability in the contact angles reported.…”