Chemical bonding analysis of a-SiC : H films by Raman spectroscopy

Chehaidar, A.; Carles, R.; Zwick, A.; Meunier, C.; Cros, B.; Durand, J.

doi:10.1016/0022-3093(94)90222-4

Cited by 77 publications

(50 citation statements)

References 29 publications

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“…For the composition range 0.35 ϽxϽ0.6, there is a saturation of the percentage of heteropolar bonds at 70%, in between the values expected for the complete chemically ordered case ͑100% of heteropolar bonds for xϭ0.5) and for the perfect mixing case ͑50% of heteropolar bonds for xϭ0.5). This result agrees with that of Chehaidar et al, 13 who reported the existence of a partial chemical order from the Raman scattering analysis of amorphous Si rich SiC films deposited by glow discharge. In this work, all the carbon atoms were bonded to Si, forming with the Si-Si bonds a tetrahedrally connected network.…”

Section: Discussionsupporting

confidence: 83%

“…Moreover, the C-C spectrum shows a double band centered at 1380 and 1590 cm Ϫ1 . This is very similar to the spectra reported for amorphous graphitic carbon, 13,22 and has been recently simulated for amorphous carbon with sp 2 coordination. All this strongly suggests C-C bonds in the amorphous material to be in sp 2 coordination.…”

Section: A Ftir and Raman Spectrasupporting

confidence: 76%

“…The spectra measured from the thermally annealed sample ͑not shown͒ are similar to those from the carbon as-implanted one. These bands are similar to those reported for amorphous Si 1Ϫx C x films obtained by different techniques 13,21,23 and have been interpreted according to a three-mode behavior, related to the different Si-Si, Si-C, and C-C vibrational modes. So, the first bands are similar to the TA and TO ones from amorphous Si ͑at about 160 and 480 cm Ϫ1 ).…”

Section: A Ftir and Raman Spectrasupporting

confidence: 69%

“…[11][12][13] In the first case, only homonuclear A-A and B-B bonds are observed, with probabilities (1Ϫx) and x, respectively. The second case corresponds to the absence of chemical order, in which a random distribution of bonds occurs.…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15][16][17][18][19] These works have involved the use of different techniques such as x-ray scattering, extended x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, Raman scattering, and infrared spectroscopy, observing a strong dependence of the chemical ordering and crystalline structure of the layers on the deposition conditions. Moreover, some of the experimental results are still not clear, being the subject of controversy.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Serre

Calvo‐Barrio

Pérez-Rodrı́guez

et al. 1996

Journal of Applied Physics

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The analysis of SiC films obtained by carbon ion implantation into amorphous Si ͑preamorphized by Ge ion implantation͒ has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy ͑XPS͒. The data obtained show the formation of an amorphous Si 1Ϫx C x layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si-C bonds in addition to the Si-Si and C-C ones in the implanted region, with a composition in the range 0.35 Ͻ x Ͻ 0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion-beam induced epitaxial crystallization ͑IBIEC͒, which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si-Si and C-C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as-implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si-C heteropolar bonds recrystallize.

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Section: Discussionsupporting

confidence: 83%

Section: A Ftir and Raman Spectrasupporting

confidence: 76%

Section: A Ftir and Raman Spectrasupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Serre

Calvo‐Barrio

Pérez-Rodrı́guez

et al. 1996

Journal of Applied Physics

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Formation of amorphous and nano‐crystalline carbon in C⁺ implanted silica glass

Herrmann

Wendler

Dunken

et al. 1996

Ber Bunsenges Phys Chem

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Rutherford backscattering spectrometry, VIS-NIR transmission of IR reflection measurements as well as Raman investigations have been used to characterize C + implanted (30 keV, 0.5 x 10l6 cm-2) silica glass. Distribution of implanted ions can be described by a Gaussian profile with a maximum at about 80 nm. C' ions penetrate to a depth of 180 nm in the substrate material. Transmission spectra in the VIS-NIR region were simulated with the dielectric functions of substrate glass and amorphous carbon using a multilayer model. Evaluation of the IR reflectance spectra indicates the creation of CO and a damage of the glass structure up to a depth of about 300 nm. Raman measurements of implanted samples show the aggregation of amorphous carbon. Anneling of samples for one hour at 700 or 1OOO"C in nitrogen atmosphere leads to the formation of nano-crystalline carbon precipitates. Furthermore, the relaxation of the glass structure and the existence of Si-C bonds has been observed after heat treatment.

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Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions

Zhang

Jiang

Pan

et al. 2019

J Raman Spectroscopy

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This study examines C+ and He+ ion irradiation‐induced amorphization processes in 3C–SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared with their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation‐induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface‐driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

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Chemical bonding analysis of a-SiC : H films by Raman spectroscopy

Cited by 77 publications

References 29 publications

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Formation of amorphous and nano‐crystalline carbon in C⁺ implanted silica glass

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions

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Chemical bonding analysis of a-SiC : H films by Raman spectroscopy

Cited by 77 publications

References 29 publications

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Formation of amorphous and nano‐crystalline carbon in C+ implanted silica glass

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C+ and He+ ions

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Product

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Formation of amorphous and nano‐crystalline carbon in C⁺ implanted silica glass

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions