Chemical bond approach to glass transition temperature and crystallization activation energy in Se90In10−xSnx (2≤x≤8) semiconducting glasses

Compositional dependence of thermal stability, glass-forming ability and fragility index in some Se–Te–Sn glasses

“…Besides, the above mentioned glassy composition, which occurs at an average coordination number of 2.36, has the lower rate of crystallization. Indeed, application of chemical bond approach to glass transition temperature and crystallization kinetics of the same glassy series as carried out by the group [54] reveal that the crystallization activation energy has its lower value at 6 atomic percentage of Sn. This was attributed to the formation of SeSn 4/2 structural units dissolved in Se chains.…”

Non-isothermal crystallization in Ga–Se–Ag chalcogenide glass by differential scanning calorimetry

“…Like the crystallization peak, the position of the glass transition peak depends on the heating rate [9]. The glassy material which has high crystallization ability during the application of an electric current or by the heat of a focused laser beam is more suitable for memory switching [10]. Besides, in recording systems, where chalcogenide materials have got applications, the used glass must be stable at low temperature and also must have a short crystallization time [11].…”

Glass transition kinetics and crystallization mechanism in Se90Cd8Bi2 and Se90Cd6Bi4 chalcogenide glasses

“…A great deal of these researches has been focused on studying the glass transition kinetics [2][3][4][5][6][7][8] and the crystallization mechanism [9][10][11][12][13][14][15]. The related parameters of these transformations are important for better understanding of the physics of these materials and for determination of the useful range of operating temperature at which these materials may be utilized in a specific technological application before crystallization takes place [9,14].…”