Chemical bath deposition of crystalline ZnS thin films

Abstract

Crystalline zinc sulfide (ZnS) thin films were prepared by chemical bath deposition (CBD) using the mixed aqueous solutions of zinc acetate, thiourea and tri-sodium citrate, where tri-sodium citrate was used as the complexing agent. The thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption. The as-deposited thin films were surface homogeneous with pure wurtzite structure and the optical band gap of the film was estimated to be 3.53 eV.

Electrochromism in tungsten oxide thin films prepared by chemical bath deposition

“…Among these techniques, chemical bath deposition methods have many advantages: they do not require sophisticated expensive equipment, various substrates including metals, semiconductors or insulators can be used, the starting chemicals are commonly available and cheap, and the preparation parameters are easily controlled [17 -21]. These methods have benefit of being easily realizable from the point of view of industrialization, especially on large area devices, with the required electrochromic properties [22,23]. The electrochromic properties of WO3 thin films, like the transmittance modulation (T), coloration efficiency (), switching time (), and cyclic durability, strongly depends on their structural, morphological and compositional characteristics [1,2], which, in turn, depends directly on the deposition method and deposition conditions.…”

Investigation of Structural and Spectroscopic Properties of Nanostructured CdS Films

“…2 shows optical absorbance curve in the range 350-800 nm for 1.0 molarity nanostructured CdS film deposited at room temperature. Optical absorption spectra of the sample shows sharp absorption edge in the visible region which indicates good crystallianity as well as low defect density near band edge [14].…”

ZnS Films: Thermodynamic Justification of Possibility for Hydrochemical Precipitation, Synthesis, Microstructure, and Morphology

“…At 300 K the hexagonal zinc sulfide has the band gap width of 3.74 eV, but the cubic one -3.66 eV [1]. For the obtained ZnS thin films, which are met and the values of band gap are less: 3.53 eV [2], 3.51 eV [3]. But in any case the band gap width of ZnS is greater than of CdS (Е g = 2.42 eV), which allows to use zinc sulfide as the optical windows for film photocells on the base of CuInSe 2 (CIS), CuIn 1−x Ga x Se 2 (CIGS) and CdTe compounds.…”