Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

Kundu, Sambhu N.; Olsen, L. C.

doi:10.1016/j.tsf.2004.05.127

Cited by 36 publications

(21 citation statements)

References 12 publications

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“…The film annealed at 200 8C has a diffraction peak from the (1 0 0), (1 0 1), (2 0 2) of hexagonal ZnO, indicating the presence of Zn(OH) 2 in the as-deposited film. In addition, the peaks of ZnS are very weak, this result has been also observed by other authors for ZnS films [18][19][20].…”

Section: Characteristics Of the Filmssupporting

confidence: 87%

Chemical bath-deposited ZnS thin films: Preparation and characterization

Liu

Mao

2008

Applied Surface Science

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Section: Characteristics Of the Filmssupporting

confidence: 87%

Chemical bath-deposited ZnS thin films: Preparation and characterization

Liu

Mao

2008

Applied Surface Science

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“…The formation of ZnO after annealing can be due to film oxidation during annealing or to the thermal decomposition of Zn(OH) 2 already present in as grown film. This is in good agreement with the reported results by several groups [44][45][46]. The annealed films have a nanocrystalline structure.…”

Section: Structural Propertiessupporting

confidence: 93%

Chemical bath deposition of nanocrystalline ZnS thin films: Influence of pH on the reaction solution

Lekiket

Aida

2013

Materials Science in Semiconductor Processing

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“…Herein, the SB heights are estimated from the differences between the electron affinity of ZnS (∼3.9 eV) and the work functions of electrode metals (4.65 eV for Cu and 5.65 eV for Pt). 48 When a bias voltage is applied, one SB is under reverse bias, while the other is forward biased simultaneously. The whole impedance is always dominated by the reverse-biased SB.…”

Section: Resultsmentioning

confidence: 99%

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge

et al. 2015

AIP Advances

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It has been reported that in chalcogenide-based electrochemical metallization (ECM) memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S), the metal filament grows from the cathode (e.g., Pt and W) towards the anode (e.g., Cu and Ag), whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2). The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

show abstract

Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

Cited by 36 publications

References 12 publications

Chemical bath-deposited ZnS thin films: Preparation and characterization

Chemical bath-deposited ZnS thin films: Preparation and characterization

Chemical bath deposition of nanocrystalline ZnS thin films: Influence of pH on the reaction solution

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

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