Chemical and electronic structure of the SiO2/Si interface

Grunthaner, F. J.; Grunthaner, P. J.

doi:10.1016/s0920-2307(86)80001-9

Cited by 450 publications

(135 citation statements)

References 177 publications

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“…This saturation behaviour has long been reported and successfully modelled. 29,30,33 We can only declare that our findings are in complete agreement with those reported.…”

Section: Resultssupporting

confidence: 87%

XPS analysis with external bias: a simple method for probing differential charging

Ertaş

Süzer

2004

Surface & Interface Analysis

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The XPS spectra of thermally grown oxide layers on Si, Al, W and Hf substrates have been recorded while the samples were subjected to external d.c. voltage bias. The bias induces additional shifts in the measured binding energy differences between the XPS peaks of the oxide and that of the metal substrate in Si and Al (as probed both in the 2p and the KLL Auger regions), but not in W and Hf (as probed in the 4f region). These bias induced shifts are attributed to differential charging between the oxide layer and the substrate, which in turn is postulated to be related to the capacitance and inversely to the dielectric constant of the oxide layer. Accordingly, silicon dioxide with the smallest dielectric constant undergoes the largest differential charging, aluminium oxide is in the middle and no appreciable charging can be induced in the high-k tungsten and hafnium oxides, all of which are ∼6 nm thick.

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“…This saturation behaviour has long been reported and successfully modelled. 29,30,33 We can only declare that our findings are in complete agreement with those reported.…”

Section: Resultssupporting

confidence: 87%

XPS analysis with external bias: a simple method for probing differential charging

Ertaş

Süzer

2004

Surface & Interface Analysis

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“…It is known that the interface states such as an Si atom with a singly occupied orbital (dangling bond) are formed at the SiO 2 /Si interface. [8] The surface compositions of O 1s, C 1s, and Si 2p spectra observed at the electron take-off angle of 90 • (ESCA750) after the photoelectric emission measurement were about 30, 20, and 50% over the entire temperature region, respectively. The atomic ratio of O/Si and the peak height ratio of SiO 2 /Si in the Si 2p spectra were, however, found to slightly decrease with increasing temperature: 0.…”

Section: Experimental Datamentioning

confidence: 97%

Characteristics of thermo‐ and photo‐stimulated electron emission from silicon wafers

Momose

Satou

Sakurai

et al. 2008

Surface & Interface Analysis

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The temperature dependence of photoelectric emission and its spectral yield has been studied for Si (100) wafer surfaces with a native oxide film. The emission measurement was performed using a gas-flow Geiger counter developed for examining real surfaces. The saturation emission observed as a function of temperatures between 26 and 350• C under illumination with far ultraviolet rays had the average activation energy of 0.27 eV in the Arrhenius plot. The analysis of the spectral yield observed after the preillumination gave two almost temperature independent photoelectric thresholds of 4.84 ± 0.11 and 5.57 ± 0.15 eV. The difference between the former value and the indirect optical excitation threshold for a clean, cleaved silicon surface reported by Gobeli and Allen approximately agrees with the activation energy. This energy is interpreted as being due to a thermal process for electron transport from the silicon substrate to the SiO 2 /Si interface states. A new emitting center with optical activation energy of about 5.7 eV was also found for the preilluminated surfaces.

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“…According to Grunthaner and Grunthaner (1986), the chemical shift in NMR is proportional to the chemical shift in XPS, that is, the energy shift in the core-level atomic orbitals. As is generally known, BO and NBO give different O1s binding energy in XPS.…”

Section: Chemical Shift In Energy Levelmentioning

confidence: 99%

A theoretical interpretation of the chemical shift of 29Si NMR peaks in alkali borosilicate glasses

Nanba

Nishimura

Miura

2004

Geochimica et Cosmochimica Acta

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Abstract−−In29 Si-NMR, it has so far been accepted that the chemical shifts of Q n species (SiO 4 units containing n bridging oxygens) were equivalent between alkali borosilicate and boron-free alkali silicate glasses. In the sodium borosilicate glasses with low sodium content, however, a contradiction was confirmed in the estimation of alkali distribution; 11 B NMR suggested that Na ions were entirely distributed to borate groups to form BO 4 units, whereas a −90 ppm component was also observed in 29 Si-NMR spectra, which has been attributed to Q 3 species associated with a non-bridging oxygen (NBO). Then, cluster molecular orbital calculations were performed to interpret the −90 ppm component in the borosilicate glasses. It was found that a silicon atom which had two tetrahedral borons (B4) as its second nearest neighbors was similar in atomic charge and Si2p energy to the Q 3 species in boron-free alkali silicates. Unequal distribution of electrons in Si−O−B4 bridging bonds was also found, where much electrons were localized on the Si−O bonds. It was finally concluded that the Si−O−B4 bridges with narrow bond angle were responsible for the −90 ppm 29 Si component in the borosilicate glasses. There still remained another interpretation; the Q 3 species were actually present in the glasses, and NBOs in the Q 3 species were derived from the tricluster groups, such as (O 3 Si)O(BO 3 ) 2 . In the glasses with low sodium content, however, it was concluded that the tricluster groups were not so abundant to contribute to the −90 ppm component.2

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Chemical and electronic structure of the SiO2/Si interface

Cited by 450 publications

References 177 publications

XPS analysis with external bias: a simple method for probing differential charging

XPS analysis with external bias: a simple method for probing differential charging

Characteristics of thermo‐ and photo‐stimulated electron emission from silicon wafers

A theoretical interpretation of the chemical shift of 29Si NMR peaks in alkali borosilicate glasses

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