Chemical amplification resists for future lithography.

Abstract

The technologies for future lithography have been proposed, such as i-line phase-shifting lithography, deep-UV lithography and electron beam lithography. We have proposed several types of chemical amplification resist systems for future lithography. These are based on the change in dissolution rate by acid catalyzed reaction for aqueous development: dissolution inhibitor to dissolution promoter for positive resists and the reverse for negative resist. Deprotection reaction of tetrahydropyranyl protected poly (hydroxystyrene) is used for positive resists. Silanol condensation reaction by acid catalyzed reaction was applied to negative resists. Pinacol rearrangement, etherification and intramolecular dehydration of carbinols can also be used for negative resists.

ab initio Study of Photochemical Decomposition Mechanism of Triphenylsulfonium Salts for KrF Excimer Laser Exposure.

“…Triphenylsulfonium salt is one of the most important photoinitiators in industry as photoacid generator (PAG) in the process of KrF excimer laser lithography [1,2]. For this reason, many research papers have been published on the photochemical acid generation mechanism from this compound [2][3][4][5][6].…”

Chemically amplified resists. VII. proton generation from triphenyl sulfonium salts via photochemical isomerization mechanism.

“…Triphenylsulfonium salt, (Ph3S)X + -(X=CF3SO3,SbF6,etc. ), has been widely used as a photoinitiator of chemically amplified resists, which are promising materials for quarter-micrometer lithography [1,2].…”