Chemical activity of the CC double bond on silicon surfaces

Bozack, Michael J.; Taylor, Patrick A.; Choyke, W. J.; Yates, John T.

doi:10.1016/0039-6028(86)90252-9

Cited by 92 publications

(67 citation statements)

References 3 publications

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“…Ethylene and propylene have been studied by several researchers. [21][22][23][24] These desorb, intact, between 550 and 580 K with some dissociation-2%-5% for monolayer ethylene 3 and 65% for monolayer propylene. For ethylene, two models have been proposed for the adsorption geometry, and both depend upon a di-bonded structure.…”

Section: -15mentioning

confidence: 99%

Thermal decomposition reactions of acetaldehyde and acetone on Si(100)

Armstrong¹,

White²,

Langell³

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We have studied the thermal interactions of acetone and acetaldehyde on Si͑100͒, both sputtered and annealed, using high resolution electron energy loss spectroscopy, ͑HREELS͒, x-ray photoelectron spectroscopy ͑XPS͒, and temperature programmed desorption ͑TPD͒. There is no carbonyl stretch in HREELS and the C and O(1s) XPS peaks reflect two different carbonyl processes, one involving bond cleavage, the other a reduction of the C-O bond order. Hydrogen TPD gives a peak at 840-850 K which is as much as threefold more intense than from H-saturated Si͑100͒. SiO desorbs near 1050 K and XPS shows total loss of oxygen and retention of carbon. Approximately 34% of the acetaldehyde monolayer and 62% of the acetone monolayer decomposes on annealed Si͑100͒ to produce silicon carbide. In contrast, after sputtering with 500 eV Ar ions, these percentages are reduced to 14% and 25%, respectively. We conclude that Si dimers play an important role in the chemistry of carbonyl groups.

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Section: -15mentioning

confidence: 99%

Thermal decomposition reactions of acetaldehyde and acetone on Si(100)

Armstrong¹,

White²,

Langell³

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…11,12 It has been demonstrated that ethylene reacts with the silicon surface via the interaction between the C-C double bond and silicon dimers, producing two Si-C bonds ͑the so-called di-bonding͒. Other alkenes are found to react in a similar fashion with the Si͑100͒ surface, [13][14][15][16][17] i.e., they bind to the surface also via the di-bonding configuration. Besides simple alkenes, conjugated dienes such as 1,3-butadiene and 1,3-cyclohexadiene have been investigated.…”

Section: Introductionmentioning

confidence: 99%

“…However, for most studied hydrocarbons-silicon systems the C-C bond cleavage is not observed. For instance, unsaturated hydrocarbons, such as acetylene, ethylene or dienes, 4 nondissociatively chemisorb on the Si(100)-(2ϫ1) surface while molecules having only single C-C bonds, e.g., methane or propane, 13 do not adsorb at all. The reason for this lies on the fact the C-C bond cleavage may be prohibited by a high kinetic barrier.…”

Section: First Principles Modelingmentioning

confidence: 99%

Spontaneous dissociation of a conjugated molecule on the Si(100) surface

Lin

Galili

Quaade

et al. 2002

The Journal of Chemical Physics

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The adsorption mechanism of ␣-sexithiophene ͑␣-6T͒ on the clean Si(100)-(2ϫ1) surface has been investigated using scanning tunneling microscopy ͑STM͒ and first principles electronic structure calculations. We find that at submonolayer coverage, the ␣-6T molecules are not stable and dissociate into monomers. We observe two different configurations of the monomers and have discussed the corresponding adsorption geometries based on theoretical calculations. The calculations elucidate how the fragments are absorbed on the surface, giving rise to the observed STM images. With increasing coverage, the STM images show the existence of complete ␣-6T molecules. In addition, results of the adsorption behavior of ␣-6T molecules on the H-passivated Si(100)-(2ϫ1) surface are reported. On this surface the molecules are highly mobile at room temperature due to the weak molecule-substrate interaction. The STM results also indicate that they can easily be anchored at the defect sites.

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“…shown that the r-bond in an unsaturated hydrocarbon is the active center for reaction of these molecules with a clean Si(100) surface [20]. In contrast, the saturated hydrocarbon molecules, containing only single bonds (a-bonds) between carbon atoms, do not react with the clean Si(100) surface at low temperatures [20].…”

mentioning

confidence: 99%

“…In contrast, the saturated hydrocarbon molecules, containing only single bonds (a-bonds) between carbon atoms, do not react with the clean Si(100) surface at low temperatures [20].…”

mentioning

confidence: 99%