Checkerboard Self-Patterning of an Ionic Liquid Film on Mercury

Tamam, L.; Ocko, B. M.; Reichert, H.; Deutsch, Moshe

doi:10.1103/physrevlett.106.197801

Cited by 30 publications

(47 citation statements)

References 29 publications

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“…The ξ values in Fig. 4(b) are similar to the ξ ≈ 200Å measured for the mercury-supported LF of a poorly-ordering ionic liquid 19 , and much smaller than the isotropic ξ ≥ 1000Å found for pure-vdW-interacting melt-supported surface-frozen alkane monolayers 15 , and mercury-supported LFs of surface-normal fatty acid molecules at area/molecule values just before collapse 12 , as is the case here. The reason for the reduced ordering tendency, indicated by the low ξ, is not clear at present.…”

Section: Pacs Numberssupporting

confidence: 77%

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Highly anisotropic thermal expansion in molecular films of dicarboxylic fatty acids

et al. 2012

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Section: Pacs Numberssupporting

confidence: 77%

“…The measured R(q z ) (symbols) and ideal R F (q z ) (dashed line) are shown in Fig. 1 supported organic LFs 9,14,19,20 . It uses 6 slabs to mimic the decaying layering of the mercury near an interface 21,22 plus the minimal number of additional slabs needed to describe the LF.…”

Section: Pacs Numbersmentioning

confidence: 55%

Highly anisotropic thermal expansion in molecular films of dicarboxylic fatty acids

et al. 2012

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“…1A, red squares and blue circles), indicating significant structural changes at the interface. Previous studies (22,24,25) identify such modulations as originating in a well-defined interfacial adlayer, having an electron density different from those of the two phases defining the interface. The modulations' period Δq z ≈ 0:8 Å −1 yields an estimated adlayer thickness of d es = 2π=Δq z ≈ 7:8 Å. Rðq z Þ at the modulations' maxima (q z ≈ 0:8 and 1.6 Å −1 ) exceeds that measured at these q z positions for Φ = − 0:90 V by more than 1 order of magnitude, indicating that the adlayer's electron density significantly exceeds that of the electrolyte.…”

mentioning

confidence: 99%

In situ X-ray studies of adlayer-induced crystal nucleation at the liquid–liquid interface

Elsen

Festersen

Runge

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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Crystal nucleation and growth at a liquid-liquid interface is studied on the atomic scale by in situ Å-resolution X-ray scattering methods for the case of liquid Hg and an electrochemical dilute electrolyte containing Pb 2+ , F − , and Br − ions. In the regime negative of the Pb amalgamation potential Φ rp = − 0:70 V, no change is observed from the surface-layered structure of pure Hg. Upon potential-induced release of Pb 2+ from the Hg bulk at Φ > Φ rp , the formation of an intriguing interface structure is observed, comprising a well-defined 7.6-Å-thick adlayer, decorated with structurally related 3D crystallites. Both are identified by their diffraction peaks as PbFBr, preferentially aligned with theirc axis along the interface normal. X-ray reflectivity shows the adlayer to consist of a stack of five ionic layers, forming a single-unit-cellthick crystalline PbFBr precursor film, which acts as a template for the subsequent quasiepitaxial 3D crystal growth. This growth behavior is assigned to the combined action of electrostatic and shortrange chemical interactions.electrochemistry | liquid metal L iquid-liquid and liquid-gas interfaces provide exciting new possibilities for material synthesis (1, 2). Contrary to solid interfaces, which exhibit strain and stress, heterogeneities, and defects such as steps, which all strongly affect growth processes, fluid systems provide soft, defect-and stress-free interfaces. The high mobility of reagents, products, and deposited particles in liquid phases facilitates the growth process as well as the selfassembly of ordered particle arrays at the interface.A large variety of materials has been prepared via deposition at liquid-liquid interfaces, such as metals (1), oxides (3, 4), chalcogenides (5, 6), polymers (7), plasmonic materials (2), and nanoparticle catalysts of ceria (3), Pd (8, 9), and Pt (10). As demonstrated by Carim et al., deposition at liquid-liquid interfaces even allows the synthesis of group IV semiconductors such as Ge from oxide materials via a simple one-step, room-temperature electrochemical process (11). Different methods for nanoparticle manufacturing, such as deposition by reduction of metal ions (12) or electrochemical deposition (11), are available at the liquidliquid interface, allowing for particle modification and growth control via adjustment of concentration or interfacial potential.Despite the absence of long-range order, liquid interfaces provide the possibility to control the crystallinity, shape, and orientation of deposits. Examples are the growth of single-crystalline CuO and CuS films (4), the surfactant-induced oriented growth of calcite crystals (13), and the formation of pyramidal PbS crystallites with defined, high surface area facets (5). These phenomena were rationalized by energetic effects, such as the interface energies, surface charges, and specific chemical interactions, as well as by the growth kinetics. However, detailed insight into the phase formation mechanisms is generally precluded by lack of atomicscale data on the in...

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“…[19][20][21][22][23][24][25][26] The first layer at the interface is tightly packed and solidlike, whereas other IL layers gradually change into disordered liquid phases. [19][20][21][22][23][24][25][26] The first layer at the interface is tightly packed and solidlike, whereas other IL layers gradually change into disordered liquid phases.…”

Section: Xiaoning Zhang and Yuguang Cai*mentioning

confidence: 99%

“…[19][20][21][22][23][24][25][26] The first layer at the interface is tightly packed and solidlike, whereas other IL layers gradually change into disordered liquid phases. [19][20][21][22][23][24][25][26] The IL interface layer has a very high charge carrier density and an ultrahigh capacitance density at the level of 0.01-0.1 F m À2 . [19][20][21][22][23][24][25][26] The IL interface layer has a very high charge carrier density and an ultrahigh capacitance density at the level of 0.01-0.1 F m À2 .…”

Section: Xiaoning Zhang and Yuguang Cai*mentioning

confidence: 99%