Cheap and Robust Ultraflat Gold Surfaces Suitable for High-Resolution Surface Modification

Abstract

A simple procedure to elaborate robust ultraflat gold surface without clean room facilities is presented. Self-assembled 3-mercaptopropytriethoxysilane (MPTMS) on silicon was used as a buffer layer on which gold was sputtered using a common sputter-coating apparatus. The optimization of the sample position into the chamber of the sputtering machine yielded the formation of a thin (approximately 8 nm) gold layer. The characterization of the resulting gold surface (i.e., AFM, X-ray reflectivity, and diffraction) has demonstrated its high smoothness (<0.7 nm) over a large scale with a preferred (111) orientation. The robustness of the substrate toward organic solvents and thermal treatment was also tested. The ability of these surfaces to be used as substrates for high-resolution surface modification was confirmed by functionalizing the gold surface using the dip pen nanolithography process.

Ultrathin Metal films for Transparent Electrodes of Flexible Optoelectronic Devices

“…The FMMSs work toward reduction in the difference between γ m + γ i and γ s , by reducing γ i as a consequence of enhancement in the adhesion with metals. As presented in Table , self‐assembled silane‐based FMMSs have long been known as good adhesion promoters of Au at the surface of silicon, glass, and silica . The morphological transition to ultrasmooth, ultrathin, continuous Au films was reported in the presence of the FMMSs.…”

Thin‐Metal‐Film‐Based Transparent Conductors: Material Preparation, Optical Design, and Device Applications

“…Silane‐based molecular surfactant has been shown to be an effective wetting promotor for thin Au films deposited on oxide surfaces. [ 142–147 ] Kossoy et al. have shown that continuous Au films (with a thickness down to 5.4 nm) can be deposited on fused silica substrate pretreated with (3‐mercaptopropyl)trimethoxysilane ( Figure a).…”

Detection of DNA Hybridization using Functionalized InN ISFETs

“…The change of water contact angle on InN surface was observed from 3 o , indicating the O 2 plasma cleaning, to 68 o after 1.5 h reaction with MPTMS vapor, which is closed to the reported saturation contact angle (~70 o ) of MPTMS silanization [12]. The change of water contact angle on InN surface was observed from 3 o , indicating the O 2 plasma cleaning, to 68 o after 1.5 h reaction with MPTMS vapor, which is closed to the reported saturation contact angle (~70 o ) of MPTMS silanization [12].…”