2013
DOI: 10.1016/j.physb.2013.01.011
|View full text |Cite
|
Sign up to set email alerts
|

Charging regime of pur spinel studied by secondary electron emission

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2014
2014
2023
2023

Publication Types

Select...
5

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(4 citation statements)
references
References 13 publications
0
4
0
Order By: Relevance
“…If the material is charged positively and as the primary electrons injection is pursued, the number of holes presents in the material, of individual cross section σ hole (the recombination cross section of electron–hole) will increase and affect the SEE yield σ along the charging process (Boughariou et al ., ). In this case, conservation equations for free secondary electrons whose flux is j ( z , t ) (in number per surface unit and per second) and for trapped sites ρ trapped ( z , t ) (in number per volume unit), will conduct to the following two equations for charge conservation: truerightd(j EES j prim )/dz=leftS electron hole () abs 0+ρ trapped σ hole j EES =leftdρ trapped /dt,where j prim ( z ) is the primary electron flux, in number per surface unit and per unit of time; S electron–hole ( z ) = j prim ( z )/λ source is the source term of electron–hole pairs, which depends on z and on E 0 (Glavatskikh et al ., ), Σ abs = Σ abs0 + ρ trapped σ hole is the total cross section of trapping of free electrons by volume unit (initial traps + holes created subsequently); its unity is length −1; and σ hole is the elementary recombination cross section between secondary electron and hole (in cm 2 per hole).…”
Section: Modelling Of See Time Evolutionmentioning
confidence: 99%
See 3 more Smart Citations
“…If the material is charged positively and as the primary electrons injection is pursued, the number of holes presents in the material, of individual cross section σ hole (the recombination cross section of electron–hole) will increase and affect the SEE yield σ along the charging process (Boughariou et al ., ). In this case, conservation equations for free secondary electrons whose flux is j ( z , t ) (in number per surface unit and per second) and for trapped sites ρ trapped ( z , t ) (in number per volume unit), will conduct to the following two equations for charge conservation: truerightd(j EES j prim )/dz=leftS electron hole () abs 0+ρ trapped σ hole j EES =leftdρ trapped /dt,where j prim ( z ) is the primary electron flux, in number per surface unit and per unit of time; S electron–hole ( z ) = j prim ( z )/λ source is the source term of electron–hole pairs, which depends on z and on E 0 (Glavatskikh et al ., ), Σ abs = Σ abs0 + ρ trapped σ hole is the total cross section of trapping of free electrons by volume unit (initial traps + holes created subsequently); its unity is length −1; and σ hole is the elementary recombination cross section between secondary electron and hole (in cm 2 per hole).…”
Section: Modelling Of See Time Evolutionmentioning
confidence: 99%
“…If the material is charged positively and as the primary electrons injection is pursued, the number of holes presents in the material, of individual cross section σ hole (the recombination cross section of electron-hole) will increase and affect the SEE yield σ along the charging process (Boughariou et al, 2013). In this case, conservation equations for free secondary electrons whose flux is j(z, t) (in number per surface unit and per second) and for trapped sites ρ trapped (z, t) (in number per volume unit), will conduct to the following two equations for charge conservation:…”
Section: Positive Chargingmentioning
confidence: 99%
See 2 more Smart Citations