Charging of highly resistive granular metal films

Orihuela, Maria Fernandez M.F.; Ortuño, M.; Somoza, A. M.; Colchero, J.; Palacios-Lidón, E.; Grenet, T.; Delahaye, Julien

doi:10.1103/physrevb.95.205427

Cited by 4 publications

(6 citation statements)

References 21 publications

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“…In the case considered here electrons and/or ions, i.e., charged particles might be experiencing creep. Thus the current obeys a power law, in some general sense analogous to [26,27]. The logarithmic dependence has been also predicted, for a highly resistive granular system of partially oxidize Al film, in [26].…”

Section: Discussionsupporting

confidence: 55%

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Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

et al. 2017

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Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, AlO dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm (i.e., 1 GV m), which is much larger than the table value of the AlO dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

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Section: Discussionsupporting

confidence: 55%

“…Thus the current obeys a power law, in some general sense analogous to [26,27]. The logarithmic dependence has been also predicted, for a highly resistive granular system of partially oxidize Al film, in [26].…”

Section: Discussionsupporting

confidence: 55%

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

et al. 2017

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“…It appears to us then that in order to interpret the measured I(t)s, one has to start with the evaluation of the separate possible contributions of the FP and the SP. Starting from the FP, we expect to find very long (stretched exponential [ 32 ], logarithmic [ 33 , 51 , 55 ] or power law [ 29 ]) decays and an aging effect. However, one has to note that such behaviors can arise from different systems’ scenarios.…”

Section: Summary and General Discussionmentioning

confidence: 99%

“…In particular, the latter distributions can be associated with grains’ charging [ 49 , 50 ] and/or level quantization of neighboring nanocrystallites [ 1 , 40 ]. On the other hand, in some nanosystems, the data fit the logarithmic relation [ 33 , 51 ] ln[I(t)/I r ] = A − Bln(t), where A and B are fitting parameters [ 43 ] that enclose more detailed physical information of the system Here, we remark that in glasses the kinetics can vary from stretched exponential [ 24 ] through ln(t)-like to 1/t-like dependencies [ 52 , 53 , 54 , 55 , 56 ]. Correspondingly, we define here a system as glassy-like if all the above-mentioned three “glassy” features are exhibited by its characteristics, and we refer to such systems as having a simple glassy behavior (SGB).…”

Section: Introductionmentioning

confidence: 99%

Glassy-like Transients in Semiconductor Nanomaterials

Balberg

2024

Nanomaterials

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Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of the present work is on the effect of the quantum confinement (QC) and the Coulomb blockade (CB) effects on the experimentally observed glassy-like behavior in semiconductor nanomaterials. Correspondingly, we studied the transient electrical currents in semiconductor systems that contain CdSe or Si nanosize crystallites, as a function of that size and the ambient temperature. In particular, in contrast to the more commonly studied post-excitation behavior in electronic glassy systems, we have also examined the current transients during the excitation. This has enabled us to show that the glassy behavior is a result of the nanosize nature of the studied systems and thus to conclude that the observed characteristics are sensitive to the above effects. Following this and the temperature dependence of the transients, we derived a more detailed macroscopic and microscopic understanding of the corresponding transport mechanisms and their glassy manifestations. We concluded that the observed electrical transients must be explained not only by the commonly suggested principle of the minimization of energy upon the approach to equilibrium, as in the mechanical (say, viscose) glass, but also by the principle of minimal energy dissipation by the electrical current which determines the percolation network of the electrical conductivity. We further suggest that the deep reason for the glassy-like behavior that is observed in the electrical transients of the nanomaterials studied is the close similarity between the localization range of electrons due to the Coulomb blockade and the caging range of the uncharged atomic-size particles in the classical mechanical glass. These considerations are expected to be useful for the understanding and planning of semiconductor nanodevices such as corresponding quantum dot memories and quantum well MOSFETs.

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“…To quantify the impact of such transitions remains a much debated problem [46,47]. It would be interesting to search for large rearrangements in disordered insulators in charging experiments [48], or via their effect on the percolating paths in conduction experiments [30].…”

mentioning

confidence: 99%

Avalanches in the Relaxation Dynamics of Electron Glasses

Goethe,

Palassini

2018

Preprint

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We study the zero-temperature relaxation dynamics of an electron glass model with single-electron hops. We find numerically that in the charge rearrangements (avalanches) triggered by displacing an electron, the number of electron hops has a scale-free, power-law distribution up to a cutoff diverging with the system size N , independently of the disorder strength and provided hops of arbitrary length are allowed. In avalanches triggered by the injection of an extra electron, the distribution does not have a power-law limit, but its mean diverges non-trivially with N . In both cases, the avalanche statistics is well reproduced by a branching process model, that assumes independent hops. Qualitative differences with avalanches in infinite-range spin glasses and related systems are discussed.

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Charging of highly resistive granular metal films

Cited by 4 publications

References 21 publications

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

Glassy-like Transients in Semiconductor Nanomaterials

Avalanches in the Relaxation Dynamics of Electron Glasses

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