Charged domain boundaries in ferroelectric crystals

Selyuk, B. V.

doi:10.1080/00150197308237693

Cited by 13 publications

(11 citation statements)

References 6 publications

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“…Indeed, internal electric fields in pyroelectric materials are usually much smaller than predicted by the theory, which does not account for surface and interface states. 39 , 40 Attempts to find even a trace of an internal electric field at the surfaces of a number of ferroelectrics did not yield any definite results. 39 The maximum value of a spontaneous polarization charge, ~10 14 cm -2 , observed for all known ferroelectrics is equal to a maximum value of a density of slow and fast surface states in these materials.…”

Section: Spontaneous Polarizationmentioning

confidence: 99%

Pyroelectric and Piezoelectric Properties of GaN-Based Materials

Gaška

Shur

Bykhovski

1999

MRS Internet j. nitride semicond. res.

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We review pyroelectric and piezoelectric properties of GaN-based materials. Pyroelectric effects in GaN have been studied in two different regimes: (i) uniform sample heating regime and (ii) under applied temperature gradient along the sample. The modeling results show that the pyroelectric coefficient, P v , in GaN (for c-axis along the contacts) can reach 7x10 5 V/m-K (compared to P v = 5x10 5 V/m-K for the best-known high temperature pyroelectric/piezoelectric material LiTaO 3 ). This points to a high potential of GaN-based sensors for high temperature pyroelectronics. Piezoelectric effects strongly affect the performance of electronic and lightemitting devices based on III-N materials. Piezoelectrically induced charge in heterostructures can be as large as 3 to 4x10 13 cm -2 . Hence, strong lattice polarization effects provide unique possibilities for utilizing GaN-based materials in high temperature piezoelectronics and for their applications in pyroelectric detectors.

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Section: Spontaneous Polarizationmentioning

confidence: 99%

Pyroelectric and Piezoelectric Properties of GaN-Based Materials

Gaška

Shur

Bykhovski

1999

MRS Internet j. nitride semicond. res.

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“…The effect has been attributed to the increase of the free carrier density near CDW in order to screen the depolarization field [1][2][3][4]. The recent interest in the abnormally high electrical conductivity along the ferroelectric domain walls [7][8][9][10][11] is due to the possible applications of this effect in high-density memory storage and reconfigurable nanoscale electronic circuits [8].…”

Section: Introductionmentioning

confidence: 99%

“…Effect of giant increase of electrical conductivity along the charged domain walls (CDW) was predicted theoretically [1][2][3][4] and discovered experimentally [5,6] more than 40 years ago. The effect has been attributed to the increase of the free carrier density near CDW in order to screen the depolarization field [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Increase and Relaxation of Abnormal Conduction Current in Lithium Niobate Crystals with Charged Domain Walls

et al. 2015

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The increase and relaxation of the conduction current caused by formation of intergrown charged domain walls (CDW) during polarization reversal have been studied in stoichiometric lithium niobate. The 10 3 -10 4 times increase of the conduction current was revealed in the temperature range 100-200 C. The current, measured during polarization reversal, consists of the conventional switching current and the conduction current along CDW dominating for T>200 C. The model based on the complex conductivity pathway along CDW was proposed. The current data were analyzed in terms of the Kolmogorov-Avrami model taking into account the input of the CDW conductivity.

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“…The recent interest in the abnormally high electrical conductivity along the ferroelectric domain walls [1][2][3][4][5][6] is due to the possible applications of this effect in high-density memory storage and reconfigurable nanoscale electronic circuits. 2 It is important to point out that the strong increase of the bulk conductivity in the vicinity of the charged domain walls (CDW) has been revealed in seventies in the single crystals of semiconductor-ferroelectric SbSI and has been investigated both theoretically [7][8][9][10] and experimentally. 11,12 The effect has been attributed to the increase of the free carrier density near CDW.…”

mentioning

confidence: 99%

“…11,12 The effect has been attributed to the increase of the free carrier density near CDW. [7][8][9][10] Recently, the effect has been studied intensively both in thin film multiferroics and ferroelectrics 1,4 and in the bulk single crystals of BaTiO 3 (Ref. 6) and LiNbO 3 (LN).…”

mentioning

confidence: 99%

Time-dependent conduction current in lithium niobate crystals with charged domain walls

Shur¹,

Батурин²,

Ахматханов³

et al. 2013

Applied Physics Letters

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We present the experimental study of the increase and decrease of the abnormal conduction current appeared during polarization reversal at elevated temperatures (120-250 C) in stoichiometric and MgO doped lithium niobate single crystals. It is shown that the conduction current is caused by existence of the through charged domain walls. The time dependence of the conduction current has been measured in low electric field immediately after partial switching. The maximal value of the conduction current in crystal with through charged domain walls is of 4-5 orders of magnitude higher than in initial single domain state. The activation energy is 1.1 eV.

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Charged domain boundaries in ferroelectric crystals

Cited by 13 publications

References 6 publications

Pyroelectric and Piezoelectric Properties of GaN-Based Materials

Pyroelectric and Piezoelectric Properties of GaN-Based Materials

Increase and Relaxation of Abnormal Conduction Current in Lithium Niobate Crystals with Charged Domain Walls

Time-dependent conduction current in lithium niobate crystals with charged domain walls

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