Charge Trapping Augmented Switchable Sub-band-gap Photoresponse of Zinc–Tin Oxide Thin-Film Transistor

Abstract

In this study, a charge trapping thin-film transistor (TFT) is demonstrated based on a zinc−tin oxide (ZTO) semiconductor channel layer and a stack of AlO x /AZO nanoparticles/SiO 2 as the gate dielectrics. This device can be switched from the pristine state to the charge trapping state via the application of a positive gate voltage pulse (V G = 40 V for 1 s). When the TFT is set at the charge trapping state, the dynamic photoresponse (to light in the wavelength of 405 or 635 nm) of drain current gain can be significantly enhanced as compared to that of the device set at the pristine state. As a comparison, the ZTO TFT without the nanoparticulate AZO layer exhibits neither charge trapping nor enhanced photoresponse characteristics. The enhancement in the dynamic photoresponse of the charge trapping TFT is attributed to the increasing number of electrons at the ZTO channel by lightassisted detrapping charges. The methodology used in this study provides a unique approach to achieve photosensitive and photostable duality within a single device.

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

“…Since Hosono's group proposed amorphous oxide semiconductors (AOS) like amorphous IGZO channel in 2004, various metal oxide semiconductor channels including indium zinc oxide (IZO), zinc tin oxide (ZTO), gallium tin oxide (GTO), indium zinc tin oxide (IZTO), zinc oxide (ZnO), and titanium oxide (TiO 2 ) have been reported as a promising channel material for TFTs to substitute Si channel. [1][2][3][4][5][6][7][8][9][10][11][12] Many groups have extensively investigated metal oxide channel materials for thin film transistors (TFTs) for the next generation flat panel displays. Due to the large band gap and high transmittance of typical AOSs, those oxide semiconductor channels could also previous reports have covered the effects of incorporation of stabilizing dopants on the device performance and stabilities.…”

Novel Method for Fabricating Visible-Light Phototransistors Based on a Homojunction-Porous IGZO Thin Film Using Mechano-Chemical Treatment

“…Most approaches have adopted heterogeneous metal-oxide structures containing additional light-absorbing layers, such as nanostructures or two-dimensional materials. , However, using these narrow band gap materials causes concomitant limitations of large-area deposition and also additional fabrication cost. To overcome these limitations, many studies have proposed indium–gallium–zinc oxide (IGZO) phototransistors with various light absorption layers for the detection of long wavelengths of visible light. − …”