Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant

Abstract

The radiation response characteristics of single-and multiple-implant SIMOX (separation by implantation of oxygen) buried oxide layers that had received a supplemental oxygen implant and anneal step were measured as a function of temperature and time after exposure to short radiation pulses. A fast capacitance-voltage technique was used for these measurements. The results indicate that, in comparison to standard SIMOX, the supplemental-implant SIMOX buried oxide shows hole motion through the oxide, greatly reduced bulk hole trapping, and little or no bulk shallow electron trapping. Substantial interfacial hole trapping was observed in these materials, as well as deep electron trapping in the single-implant material.

A modification of formulas used in SOI capacitors analysis and its application in total dose radiation

“…During the y irradiation, a great quantity of electron-hole pairs are generated [6,8]. While the electrons are swept away rapidly in the external electric field, the holes move slowly along the direction of the field.…”

“…When a y-ray irradiates a piece of SIMOX material, it will produce a great quantity of positive charges that are trapped in the oxide layer and at Si/Si02 interface [5,6]. In order to reduce both of them, some F+ ions were implanted into the SIMOX materials.…”

Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon

“…[39][40][41][42] Even in the low-dose (D ϭ4ϫ10 17 O ϩ cm Ϫ2 ) SIMOX BOX where silicon inclusions are absent, the hole trapping probability remains at nearly 100% indicating that hole traps are related to oxide network imperfections. 14 The high-temperature annealing of thermally grown SiO 2 sandwiched between two silicon layers, such as in the BOX of bonded structures, 43,44 causes the hole trapping properties to be similar to those of the SIMOX BOX.…”

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

“…For SIMOX wafers, other implant and anneal conditions have been explored to reduce radiation-induced charge trapping. For instance, buried oxides formed using supplemental [38][39][40][41][42] and multiple [43] implants and anneals show less radiation-induced degradation than buried oxides formed with a single implant. Both the number of radiation-induced interface traps and the concentration of oxide-trapped charge were significantly reduced for buried oxides formed using multiple implants [43].…”