Charge-Trap-Non-volatile Memory and Focus on Flexible Flash Memory Devices

Saranti, Konstantina; Paul, Shashi

doi:10.1007/978-3-319-48705-2_2

Cited by 5 publications

(2 citation statements)

References 131 publications

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“…Since then, many works have attributed the bistable switching device behaviors to this model. 32,[69][70][71][72][73][74][75][76][77][78] It is necessary, therefore, to examine the details of this model if the features are to be identified and the differences to be recognized. Under this proposed model, the 'write' operation is performed when a write voltage is applied to the device, during which the charges (electrons in this case) tunnel through the insulator barrier and start populating the nanoparticles.…”

Section: Charge Trapping and Internal Field Modelmentioning

confidence: 99%

“…Further information on this model will be presented along with the device measurements. Various devices have been studied under this model to successfully explain device bistability, including metal nanoparticles, 5,32,70,79–81 macromolecules, 69,76–78,82 ferroelectric nanocomposites, 75,83 nanowires, 71–73 and other organic molecules. 74…”

Section: Introductionmentioning

confidence: 99%

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Storing electronic information on semi-metal nanoparticles

Manjunatha

Paul

2022

Mater. Adv.

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Section: Charge Trapping and Internal Field Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Storing electronic information on semi-metal nanoparticles

Manjunatha

Paul

2022

Mater. Adv.

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Organic and Macromolecular Memory – Nanocomposite Bistable Memory Devices

Paul¹

2022

Advances in Semiconductor Technologies

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To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Paul

2022

Small

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Organic memory devices are a rapidly evolving field with much improvement in device performance, fabrication, and application. But the reports have been disparate in terms of the material behavior and the switching mechanisms in the devices. And, despite the advantages, the lack of agreement in regards to the switching behavior of the memory devices is the biggest challenge that the field must overcome to mature as a commercial competitor. This lack of consensus has been the motivation of this work wherein various works are compiled together to understand influencing factors in the memory devices. Different works are compared together to discover some clues about the nature of the switching occurring in the devices, along with some missing links that would require further investigation. The charge storage mechanism is critically analyzed alongside the various resistive switching mechanisms such as filamentary conduction, redox‐based switching, metal oxide switching, and other proposed mechanisms. The factors that affect the switching process are also analyzed including the effect of nanoparticles, the effect of the choice of polymer, or even the effect of electrodes on the switching behavior and the performance parameters of the memory device.

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Charge-Trap-Non-volatile Memory and Focus on Flexible Flash Memory Devices

Cited by 5 publications

References 131 publications

Storing electronic information on semi-metal nanoparticles

Storing electronic information on semi-metal nanoparticles

Organic and Macromolecular Memory – Nanocomposite Bistable Memory Devices

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

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