Charge transport properties of undoped SI LEC GaAs solid-state detectors

Beaumont, S.P.; Bertin, R.; Booth, C. N.; Bruzzi, M.; Buttar, C. M.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.; D’Auria, S.; DeGennaro, S.; Papa, D. Del; Doḡru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Hou, Yaonan; Houston, P.A.; Jones, B.K.; Lynch, J.G.; Lisowski, B.; Matheson, J.; Nava, F.; Nuti, Marco; O’Shea, V.; Pelfer, P. G.; Pischedda, M.H.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.; Skillikorn, I.O; Sloan, T.; Smith, K. M.; Tartoni, N.; Have, I. ten; Turnbull, R.M.; Vinattieri, A.; Zichichi, A.

doi:10.1016/0168-9002(93)90371-n

Cited by 18 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently metal/semi-insulating ͑SI͒-GaAs constants have attracted both scientific and technological interest. [1][2][3][4][5] Some of the SI-GaAs Schottky contact devices, such as radiation detectors, require operation under large reverse bias conditions and thus the distribution of the electric field at such contacts has become an important area of study. [3][4][5] The positron, being a positive carrier of electric charge that possesses a simpler band structure and a relatively larger effective mass than its hole counterpart, 6 can be usefully employed as an effective electric field probe within a semiconductor since the drift motion of the particle can be detected in a number of ways.…”

Section: Introductionmentioning

confidence: 99%

Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam

Hu¹,

Ling²,

Beling³

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

The interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases. The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages ͑less than 50 V͒ which at higher biases tends towards saturation. This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (ϳ1 kV cm Ϫ1 ) found at the unbiased junction, with a rapid increase of EL2 ϩ neutralization occurring for biases above 10 V. At still higher fields ϳ10 kV cm Ϫ1 (biasesϾ50 V), there appears to be an additional threshold for more complete EL2 ϩ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III-V semiconductors where surface midgap Fermi-level pinning is common.

show abstract

Section: Introductionmentioning

confidence: 99%

Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam

Hu¹,

Ling²,

Beling³

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The reproducibility of the best value obtained for the cce has been verified by using several SL96 specimens. Moreover, since the cce is found to be strongly dependent on the thickness of the detector [4], the latter has been varied between 80 and 300 µm. Figure 2 shows the cce for β on the Schottky contacts as a function of V b and thickness for SL96 specimens.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover the detectors have proved able to withstand radiation levels up to 50 Mrad gamma rays and 7 × 10 14 neutrons per cm 2 , without severe degradation of their performance [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Influence of electron traps on charge-collection efficiency in GaAs radiation detectors

Nava

Canali

Castaldini

et al. 1994

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsulated Czochralski gallium arsenide detectors fabricated with thicknesses of 80 µm, 200 µm, and 300 µm. The results, obtained within the context of the RD-8 project, show that low values of chargecollection efficiency cannot be ascribed primarily to the presence of high concentrations of EL2 defects. Possible ways of increasing the charge-collection efficiency are briefly addressed.

show abstract

“…Unfortunately, the higher bias voltage could not be applied due to surface sparking in the device. Extrapolating measured points, the 100% CCE was expected at about 700 V bias voltage.The CCE [16][17][18][19] and amplitude [4][5][6] as function of the bias voltage show saturation for higher bias voltages; unfortunately, the maximal bias voltage used was not more than 200 V in these works. The bias voltage up to 1000 V was applied in Ref.…”

Section: Operational Characteristicsmentioning

confidence: 98%

“…The measurements were performed using a charge preamplifier with capacitively coupled input [15]. The energy to produce e-h pair in GaAs was 4.27 eV [16]. Using this value the total charge generated by the 241 Am a-particle in GaAs was calculated.…”

Section: Operational Characteristicsmentioning

confidence: 99%

Response of semi-insulating thick GaAs detector for -particles, -rays and X-rays

Kordyasz

Strzelecka

Kownacki

et al. 2005

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

Charge transport properties of undoped SI LEC GaAs solid-state detectors

Cited by 18 publications

References 6 publications

Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam

Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam

Influence of electron traps on charge-collection efficiency in GaAs radiation detectors

Response of semi-insulating thick GaAs detector for -particles, -rays and X-rays

Contact Info

Product

Resources

About