2020
DOI: 10.1016/j.jssc.2020.121446
|View full text |Cite
|
Sign up to set email alerts
|

Charge transport mechanisms and magnetoresistance behavior of La0.6Pr0.1Ca0.3MnO3 manganite

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
2
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 15 publications
(4 citation statements)
references
References 70 publications
0
2
0
Order By: Relevance
“…It is believed that electron-electron correlation interaction can also give rise to resistance upturn that includes an additional term ∞ T 1/2 in the resistance expression. [47,50,51] Therefore, we modified the equation for resistance in the metallic region as R FM = R 0 +AT 2 +BT 5 -CT 1/2 and fitted our resistance in the whole temperature range. Here, C is the electron-electron correlation coefficient.…”
Section: Resultsmentioning
confidence: 99%
“…It is believed that electron-electron correlation interaction can also give rise to resistance upturn that includes an additional term ∞ T 1/2 in the resistance expression. [47,50,51] Therefore, we modified the equation for resistance in the metallic region as R FM = R 0 +AT 2 +BT 5 -CT 1/2 and fitted our resistance in the whole temperature range. Here, C is the electron-electron correlation coefficient.…”
Section: Resultsmentioning
confidence: 99%
“…represent the resistivity for 0 T and 0.8 T fields [25][26][27]. The MR % is high at low temperatures, as shown in Figure 5, indicating the extrinsic mechanism of MR effect.…”
Section: Electrical Propertiesmentioning
confidence: 85%
“…In order to gain more in-depth into the magnetic properties within the paramagnetic (PM) region, a graph illustrating the inverse of 𝜒𝜒𝜒𝜒 ′ plotted against temperature (T) was generated, as depicted in Figure 3 Under a 0.8 T magnetic field, however, the resistivity slightly reduced supported by the graph of log ρ versus temperature (in the inset of Figure 4), resulting in the magnetoresistance (MR) effect. The MR effect which calculated using equation MR (%) =(ρ(0,T)-ρ(H,T))/ρ(0,T) ×100% , where ρ(0,T) and ρ(H,T) represent the resistivity for 0 T and 0.8 T fields [25][26][27]. The MR % is high at low temperatures, as shown in Figure 5, indicating the extrinsic mechanism of MR effect.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…Their presence has a significant appeal to researchers and technicians, prompting them to do depth studies. Some intriguing phenomena can be explored, such as microwave absorber properties, magnetostriction, magnetoresistance, [12][13][14][15] magnetocaloric effect, 1,4,16,17 multiferroic properties, 7 and others. One of the phenomena that has been intensively developed for the application of MRT is the magnetocaloric effect (MCE).…”
Section: Okvarahireka Vitayayamentioning
confidence: 99%