1991
DOI: 10.1080/13642819108207582
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Charge transport in boron-doped diamond thin films

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Cited by 23 publications
(9 citation statements)
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“…There is the possibility that some of the carriers are associated with hydrogen in the nanocrystalline diamond film. For activated conduction, the following relationship between the electrical conductivity and the temperature is expected: where Δ E is the activation barrier for conduction. The weak temperature dependence of the electrical resistivity (or conductivity) and hence the carrier concentration and carrier mobility are consistent with the diamond behaving electronically as a degenerate semiconductor or semimetal.…”
Section: Discussionmentioning
confidence: 99%
“…There is the possibility that some of the carriers are associated with hydrogen in the nanocrystalline diamond film. For activated conduction, the following relationship between the electrical conductivity and the temperature is expected: where Δ E is the activation barrier for conduction. The weak temperature dependence of the electrical resistivity (or conductivity) and hence the carrier concentration and carrier mobility are consistent with the diamond behaving electronically as a degenerate semiconductor or semimetal.…”
Section: Discussionmentioning
confidence: 99%
“…The Hall hole mobility ( Fig. 4C ) at 300 K was 55.6 cm 2 V −1 s −1 , which is 200 times higher than nanocrystalline diamond films ( 22 ) and 20 to 70 times higher than polycrystalline diamond films ( 5 , 29 , 30 ) with similar doping concentrations. Nanocrystalline BDD films normally have small carrier mobility because of the abundant grain boundaries, which impede efficient electrical transport.…”
Section: Resultsmentioning
confidence: 87%
“…2 shows the results of calculations of temperature T j ðN; KÞ, determined from Eq. (27), applied to boron-doped p-type diamonds for compensation ratios K ¼ 0.15 and K ¼ 0.5 as a function of boron atom concentration N. The values of T j obtained from experimental data [67][68][69][70][71][72][73][74][75] are also presented. We should note that the compensation ratio of the diamond samples with boron concentration N % 3 Â 10 17 cm À3 studied in Refs.…”
Section: Calculation Of the Ionization Equilibrium Parameters In P-dia:b Under Transition From Band-like To Hopping Conductionmentioning
confidence: 99%