Charge transport in boron-doped diamond thin films

Mort, J.; Okumura, Kazuki; Machonkin, M. A.

doi:10.1080/13642819108207582

Cited by 23 publications

(9 citation statements)

References 17 publications

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“…There is the possibility that some of the carriers are associated with hydrogen in the nanocrystalline diamond film. For activated conduction, the following relationship between the electrical conductivity and the temperature is expected: where Δ E is the activation barrier for conduction. The weak temperature dependence of the electrical resistivity (or conductivity) and hence the carrier concentration and carrier mobility are consistent with the diamond behaving electronically as a degenerate semiconductor or semimetal.…”

Section: Discussionmentioning

confidence: 99%

Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode

Wachter

Munson

Jarošová

et al. 2016

ACS Appl. Mater. Interfaces

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The morphology, microstructure, chemistry, electronic properties, and electrochemical behavior of a boron-doped nanocrystalline diamond (BDD) thin film grown on quartz were evaluated. Diamond optically transparent electrodes (OTEs) are useful for transmission spectroelectrochemical measurements, offering excellent stability during anodic and cathodic polarization and exposure to a variety of chemical environments. We report on the characterization of a BDD OTE by atomic force microscopy, optical spectroscopy, Raman spectroscopic mapping, alternating-current Hall effect measurements, X-ray photoelectron spectroscopy, and electrochemical methods. The results reported herein provide the first comprehensive study of the relationship between the physical and chemical structure and electronic properties of a diamond OTE and the electrode's electrochemical activity.

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Section: Discussionmentioning

confidence: 99%

Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode

Wachter

Munson

Jarošová

et al. 2016

ACS Appl. Mater. Interfaces

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“…The Hall hole mobility ( Fig. 4C ) at 300 K was 55.6 cm 2 V −1 s −1 , which is 200 times higher than nanocrystalline diamond films ( 22 ) and 20 to 70 times higher than polycrystalline diamond films ( 5 , 29 , 30 ) with similar doping concentrations. Nanocrystalline BDD films normally have small carrier mobility because of the abundant grain boundaries, which impede efficient electrical transport.…”

Section: Resultsmentioning

confidence: 87%

Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond

Fan

Constantin

et al. 2021

Sci. Adv.

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Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH2). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 1021 cm−3, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm2 V−1 s−1, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.

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“…2 shows the results of calculations of temperature T j ðN; KÞ, determined from Eq. (27), applied to boron-doped p-type diamonds for compensation ratios K ¼ 0.15 and K ¼ 0.5 as a function of boron atom concentration N. The values of T j obtained from experimental data [67][68][69][70][71][72][73][74][75] are also presented. We should note that the compensation ratio of the diamond samples with boron concentration N % 3 Â 10 17 cm À3 studied in Refs.…”

Section: Calculation Of the Ionization Equilibrium Parameters In P-dia:b Under Transition From Band-like To Hopping Conductionmentioning

confidence: 99%

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

Poklonski

Вырко

Poklonskaya

et al. 2016

Journal of Applied Physics

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A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulatormetal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature T j is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K % 0.15 and temperature T j , the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3T j /2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to T j hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (À1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the range from 3 Â 10 17 to 3 Â 10 20 cm À3 , i.e., up to the Mott transition. The model uses no fitting parameters. Published by AIP Publishing.

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Charge transport in boron-doped diamond thin films

Cited by 23 publications

References 17 publications

Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode

Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode

Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

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