Charge Transient Spectroscopy Study Of Deep Centers In Cvd Diamond And Diamond-Like Films

Polyakov, V. I.; Rukovishnikov, A.I.; Rossukanyi, N.M.; Varnin, V. P.; Teremetskaya, I. G.; Druz, B.; Ostan, E.; Hayes, A.

doi:10.1557/proc-442-687

Cited by 16 publications

(15 citation statements)

References 6 publications

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“…4a shows the change in detected charge as a function of time, for increasing device temperatures during constant optical excitation (at 240 nm) of an untreated device. The main peak in the figure shifts to the left, as expected for a typical Q-DLTS spectrum [14], as the temperature is increased in 10 K steps from 370 to 510 K (only a subset of the full curve-set is shown). Similar curve-sets were obtained for multiply treated devices.…”

Section: Resultssupporting

confidence: 52%

“…4a yield straight lines from which trap activation energies and cross sections can be calculated [14]. Figure 5 shows an example plotted from the data obtained for the untreated sample; a trap energy of %0.73 eV and cross section of %6.6 Â 10 ±17 cm ±2 can be determined.…”

Section: Resultsmentioning

confidence: 99%

“…1. In addition to this form of transient photoconductivity measurement, the defect structure of the material was studied using charge sensitive deep level transient spectroscopy (Q-DLTS, ASMEC-3 from ImOnTech Inc.); further details of these techniques can be found elsewhere [14]. In brief, the detector is charged with a dc bias, with a small ac component placed on top.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

Whitfield

Lansley

Gaudin

et al. 2000

phys. stat. sol. (a)

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Deep UV, visible blind, photoconductive devices fabricated on polycrystalline CVD diamond using inter-digitated planar electrodes have shown promising characteristics. The`as-fabricated' device performance is insufficient for many applications; a particularly demanding example is the monitoring of high power excimer lasers operating in the UV, which ideally require visible-blind, radiation hard fast UV detectors. However, post-growth treatments can strongly modify the performance level achieved. In this paper, we show that sequentially applied treatments can progressively change both the gain and speed of these devices. We have used charge sensitive deep level transient spectroscopy (Q-DLTS) to study the effect of these treatments on the defect structure of CVD material. For the first time, we report the realisation of diamond photoconductive devices capable of operating at more than 1 MHz at 193 nm.

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Section: Resultssupporting

confidence: 52%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

Whitfield

Lansley

Gaudin

et al. 2000

phys. stat. sol. (a)

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“…The Q-DLTS technique is described in detail in Ref. 9. In the present work the trapped charge transient process is controlled after applying a voltage pulse of magnitude in the range 0.1 V to 10 V and duration from 10 6 to 10 s. The charge Q flowing through the circuit during the time period t D t 2 t 1 (Q-DLTS signal) is measured as a function of the pulse magnitude, temperature and rate window m D t 2 t 1 / ln t 2 /t 1 , where t 1 and t 2 are the times counted from the beginning of discharge.…”

Section: Charge-based Deep-level Transient Spectroscopymentioning

confidence: 99%

“…First, we explore impurity-induced defects and their density, capture crosssection and energy distribution in the diamond's forbidden bandgap. Charge-based deep-level transient spectroscopy (Q-DLTS) 9 is applied to study these properties. Next, we analyze transverse electrical conductivities, i.e.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of low‐field‐emitting ultrananocrystalline diamond films

Фролов

Pimenov

Konov

et al. 2004

Surface & Interface Analysis

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This work reports on electronic properties of nitrogen-doped, n-type ultrananocrystalline diamond (UNCD) films grown on p-type Si substrates from CH 4 -Ar-N 2 gas mixtures using a microwave plasma chemical vapor deposition technique. Films ∼1 µm thick were grown with 5%N 2 and 10%N 2 in the plasmas. Charge-based deep-level transient spectroscopy showed a shallow level of point defects with an activation energy of ∼0.05 eV. The density of these shallow defects was increased with increasing nitrogen content in the plasma. Complex scanning probe microscopy methods were applied to study the film microstructure. Generally it was found that the nitrogen-doped UNCD films showed a periodic 'cell-like' structure in which the cell with a lateral size of several nanometers was less conducting than the boundary between the cells. The boundary width was found to be 0.5-1 nm. The observed details of the periodic structure can be associated with diamond nanocrystallites (grains) and grain boundaries, respectively. In addition, 2-5 nm high-conducting inclusions clustered on the film surface were observed. It was noted that the emission field was inversely proportional to the film electroconductivity, and the lowest emission field of F ∼ 10 V µm −1 was detected near the high-conducting inclusions. Moreover, the surface electron potential at the emission sites was lowered. The reasons why the shallow donor center is predominantly introduced by nitrogen incorporated into the grain boundaries and the possible mechanisms of low-field electron emission from the nitrogen-doped UNCD films have been discussed.

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High Speed Diamond Photoconductive Devices for UV Detection

Whitfield

Lansley

Gaudin

et al. 2001

phys. stat. sol. (a)

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Deep UV visible blind photoconductive devices can be fabricated on polycrystalline CVD diamond, a material that is intrinsically radiation hard and visible blind. However, the performance of detectors fabricated on as-grown material is insufficient to meet the requirements of many laserbased applications. In this paper, it is shown that sequentially applied post-growth treatments can progressively change both the gain and speed of these devices. Charge sensitive deep level transient spectroscopy (Q-DLTS) and transient photoconductivity (TPC) has been used to study the effect of these treatments on the defect structure of our thin film diamond detector material. For the first time, we report the successful operation of a diamond photoconductive device with linear bias and fluence response characteristics at more than 1 kHz at 193 nm.

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Charge Transient Spectroscopy Study Of Deep Centers In Cvd Diamond And Diamond-Like Films

Cited by 16 publications

References 6 publications

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

Electronic properties of low‐field‐emitting ultrananocrystalline diamond films

High Speed Diamond Photoconductive Devices for UV Detection

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