Charge transfer from adsorbates to the bulk in a–Si:H

Aker, B.

doi:10.1080/13642818708208618

Cited by 16 publications

(7 citation statements)

References 27 publications

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“…In particular oxygen and nitrogen in the bulk, but also surface adsorbates can give rise to a shift of the Fermi-energy at least in part of the sample. [9,10] In this case, the existence of dangling bonds is closely related to the position of the Fermi-level, as shown in Fig. 1 (b).…”

Section: Introductionmentioning

confidence: 79%

Are there Charged Dangling Bonds in Device Quality Amorphous Silicon?

1993

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We discuss the possible existence of a considerable density of charged dangling bond defects in device-quality hydrogenated amorphous silicon, which for example has been postulated by recent thermal equilibrium models for the density-of-states distribution. Based on a quantitative analysis of spin resonance and light-induced spin resonance data at different temperatures as well as on subgap absorption measurements, we conclude that intrinsic a-Si:H only has a small density of charged defects caused by unintentional impurity doping. The same conclusion also holds for light-soaked a-Si:H and for samples which are dehydrogenated by annealing at high temperatures.

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Section: Introductionmentioning

confidence: 79%

Are there Charged Dangling Bonds in Device Quality Amorphous Silicon?

1993

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“…At room temperature, the conductivity is high due to gas molecules adsorbed on the large internal surface of the twodimensional sheet polymer siloxene. Such an increase of conductivity is known from amorphous silicon 10 where it was demonstrated that electronic donor states generated by chemisorbed water molecules at the surface increase the conductivity. At temperatures between 100 and 150°C, these gas molecules desorb and the conductivity approaches the intrinsic value.…”

Section: A Dark Conductivitymentioning

confidence: 85%

Transport properties and electroluminescence of siloxene

Rosenbauer

Stutzmann

1997

Journal of Applied Physics

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“…We allocated 512 MB to memcached. To send requests to memcached from a client machine, we used the memaslap benchmark included in libmemcached 1.0.18 [30]. It is well known that the migration performance is largely affected by the rate at which the memory pages of a VM are modified.…”

Section: Co-migration Of Memcached and An Idsmentioning

confidence: 99%

Co-migration of Virtual Machines with Synchronization for IDS Offloading

Kourai

Utsunomiya

2014

IPSJ Online Transactions

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Since Infrastructure-as-a-Service (IaaS) clouds contain many vulnerable virtual machines (VMs), intrusion detection systems (IDSes) should be run for all the VMs. IDS offloading is promising for this purpose because it allows IaaS providers to run IDSes outside of VMs without any cooperation of the users. However, offloaded IDSes cannot continue to monitor their target VM when the VM is migrated to another host. In this paper, we propose VMCoupler for enabling co-migration of offloaded IDSes and their target VM. Our approach is running offloaded IDSes in a special VM called a guard VM, which can monitor the internals of a target VM using VM introspection. VMCoupler can migrate a guard VM together with its target VM and restore the state of VM introspection at the destination. The migration processes of these two VMs are synchronized so that a target VM does not run without being monitored. We have confirmed that the overhead of monitoring and co-migration was small.

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Charge transfer from adsorbates to the bulk in a–Si:H

Cited by 16 publications

References 27 publications

Are there Charged Dangling Bonds in Device Quality Amorphous Silicon?

Are there Charged Dangling Bonds in Device Quality Amorphous Silicon?

Transport properties and electroluminescence of siloxene

Co-migration of Virtual Machines with Synchronization for IDS Offloading

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