Charge transfer at double-layer to single-layer transition in double-quantum-well systems

Katayama, Y.; Dc, Tsui; Hc, Manoharan; Parihar, S. R.; Shayegan, M.

doi:10.1103/physrevb.52.14817

Cited by 31 publications

(21 citation statements)

References 31 publications

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“…Following calculations in refs. 42,43 , using a classical estimate of a single-layer Wigner crystal cohesive energy, and neglecting the kinetic energy since both layers are considered in the lowest Landau level, we find the capacitive model can underestimate the the p T OT at which the the bottom layer is completely depleted by as much as 1 × 10 10 cm −2 . (c) Spectra, real diagonal conductivity Re (σxx) vs frequency, f , from sample M465.…”

Section: Experimental Methodsmentioning

confidence: 99%

Unequal layer densities in bilayer Wigner crystal at high magnetic fields

et al. 2012

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We report studies of pinning mode resonances of magnetic field induced bilayer Wigner crystals of bilayer hole samples with negligible interlayer tunneling and different interlayer separations d, in states with varying layer densities, including unequal layer densities. With unequal layer densities, samples with large d relative to the in-plane carrier-carrier spacing a, two pinning resonances are present, one for each layer. For small d/a samples, a single resonance is observed even with significant density imbalance. These samples, at balance, were shown to exhibit an enhanced pinning mode frequency [Zhihai Wang et al., Phys. Rev. Lett. 136804 (2007)], which was ascribed to a onecomponent, pseudospin ferromagnetic Wigner solid. The evolution of the resonance frequency and line width indicates the quantum interlayer coherence survives at moderate density imbalance, but disappears when imbalance is sufficiently large.

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Section: Experimental Methodsmentioning

confidence: 99%

Unequal layer densities in bilayer Wigner crystal at high magnetic fields

et al. 2012

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“…The Fermi surface formed by hybridized electronlike and holelike branches is realized in the 2D systems obtained by using quantum wells with InAs/GaSb heterointerfaces 6 and with gapless semiconductor layers. 7 The two-subband systems described above are sensitive to the transverse electric fields induced by external gates, 5,8 as well as to strong in-plane magnetic fields. 9,10 Such fields considerably influence the magnetoresistance, since they change the subband popula-tions and can lead to a substantial distortion of the Fermi surface, including a transition from double-to singlesubband occupation.…”

Section: Introductionmentioning

confidence: 99%

“…9,10 Such fields considerably influence the magnetoresistance, since they change the subband popula-tions and can lead to a substantial distortion of the Fermi surface, including a transition from double-to singlesubband occupation. 8,10 The recent studies of magnetoresistance in high-mobility GaAs/AlGaAs DQWs have demonstrated 11,12 the importance of quantum transport phenomena for the systems with two populated subbands in the region of low magnetic fields even at relatively high temperatures, when the Shubnikov-de Haas oscillations ͑SdHOs͒ of resistivity are suppressed. However, in spite of the progress in understanding the magnetotransport properties of these systems, some questions remain open.…”

Section: Introductionmentioning

confidence: 99%

Classical and quantum magnetoresistance in a two-subband electron system

et al. 2009

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We observe a large positive magnetoresistance in a bilayer electron system ͑double quantum well͒ as the latter is driven by the external gate from double to single layer configuration. Both classical and quantum contributions to magnetotransport are found to be important for explanation of this effect. We demonstrate that these contributions can be separated experimentally by studying the magnetic-field dependence of the resistance at different gate voltages. The experimental results are analyzed and described by using the theory of low-field magnetotransport in the systems with two occupied subbands.

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“…We focus on the possibility of an exchange-induced discontinuous charge transfer from the front layer to the back layer, as the front layer is depleted. 6,7 Our study is motivated by previous work on this subject. Katayama et al 6 observed a sharp and significant (ϳ50%) drop in the in-plane resistance of a BLES as the front layer was depleted, and interpreted this observation as a signature of a sudden interlayer charge transfer.…”

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confidence: 99%

Interlayer charge transfer in double-quantum-well systems

et al. 1997

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As the front-layer density in a bilayer electron or hole system is depleted by the application of a biased front gate, the density in the back layer increases due to the exchange term in the energy. For the sample parameters we studied, a self-consistent calculation using the local-density approximation predicts a discontinuous charge transfer that is not observed experimentally. We discuss possible origins of this discrepancy.

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Charge transfer at double-layer to single-layer transition in double-quantum-well systems

Cited by 31 publications

References 31 publications

Unequal layer densities in bilayer Wigner crystal at high magnetic fields

Unequal layer densities in bilayer Wigner crystal at high magnetic fields

Classical and quantum magnetoresistance in a two-subband electron system

Interlayer charge transfer in double-quantum-well systems

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