Charge-Storage-Type Optoelectronic Sensor with DOG-Function Characteristics

Matsui, Yasuhiro; Miyoshi, Yoshio

doi:10.1109/icsens.2005.1597839

Cited by 1 publication

(9 citation statements)

References 7 publications

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“…Calculated results assuming (i.e., quasi-p-type) in (1) are shown in Fig. 4 [20]. The value increases with the value.…”

Section: Mobility Of Minority Carriersmentioning

confidence: 77%

“…The dependence of PIC on forward bias voltage is shown in Table I [20]. The values of applied voltage are shown in the figure.…”

Section: A Photoinduced Currentmentioning

confidence: 99%

“…2, a schematic energy band diagram near the surface under a forward bias voltage is shown as a sample with a carrier-storage layer [20]. A Schottky barrier lowering due to the forward bias voltage can cause an energy step between two regions in the cap layer, one is with an Al Schottky contact on the surface (contact region), and the other is with the bare surface surrounded by the Al metal of a ring-shaped contact (bare region).…”

Section: B Principle Of Sensor Devicementioning

confidence: 99%

“…1. The layer structures have been formed by [20] molecular beam epitaxy on a Si-doped (001) GaAs substrate whose effective carrier density is . The following layers were successively grown: undoped MQW structure (10 nm GaAs well and 40 nm barrier, 9 periods), GaAs (undoped, 12 nm) and GaAs top layer (undoped, 8 nm).…”

Section: A Layer Structurementioning

confidence: 99%

“…1 is composed of the GaAs subjacent layer, the storage layer, and the GaAs top layer. The materials of the storage layer are varied according to the sensors, as shown in Table I [20]. The beam separation MBE method was used for the growth of the InAs/GaAs short-period superlattice (SSL) structure.…”

Section: A Layer Structurementioning

confidence: 99%

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Difference-of-Gaussian-Like Characteristics for Optoelectronic Visual Sensor

Matsui

Miyoshi

2007

IEEE Sensors J.

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Architecture using a new nonlinear optoelectronic sensor has been developed to imitate the functions of the higher level visual cortex. The optoelectronic sensor developed in this work has the properties approximated by difference of Gaussian (DOG) functions. The properties are due to the negative photoinduced current (PIC) and the negative differential (ND) characteristics according to the forward bias voltage, which have been successfully obtained for layer structures with a charge-storage layer of InAs/GaAs short-period superlattice. By using the new sensors, an optoelectronic sensing circuit has been designed conceptually to imitate the functions of selectivity to orientation angle, motion-direction and length of slit light in visual cortex.Index Terms-Difference of Gaussian (DOG), optoelectronic sensor, superlattice, visual cortex.

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“…Calculated results assuming (i.e., quasi-p-type) in (1) are shown in Fig. 4 [20]. The value increases with the value.…”

Section: Mobility Of Minority Carriersmentioning

confidence: 77%

“…The dependence of PIC on forward bias voltage is shown in Table I [20]. The values of applied voltage are shown in the figure.…”

Section: A Photoinduced Currentmentioning

confidence: 99%

Section: B Principle Of Sensor Devicementioning

confidence: 99%

Section: A Layer Structurementioning

confidence: 99%

Section: A Layer Structurementioning