1973
DOI: 10.1063/1.1654457
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Charge storage in ZnIn2S4 single crystals

Abstract: We observe that, when ZnIn2S4 monocrystals at a temperature below 170°K are illuminated by light of the gap energy, the dark resistance, after illumination, is lowered by about nine orders of magnitude. This high-conductivity state persists until the crystals are either (a) warmed to room temperature, (b) exposed to light of a definite energy less than the gap width, or (c) placed in an electric field. We propose a level 1.76 eV above the valence band, with a repulsive barrier of 0.11 eV, which an electron mus… Show more

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Cited by 100 publications
(51 citation statements)
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“…In addition, the shell materials can provide effective protection for the core Si against aqueous corrosion. ZnIn 2 S 4 , a ternary chalcogenide semiconductor with excellent physical and chemical properties, has attracted increasing attention in different fields, such as catalysis, thermoelectricity, and charge storage [19][20][21]. For example, it exhibits band gaps ranging from 2.38 to 3.02 eV, and the corresponding absorption peaks shift from the ultraviolet to the visible region [22].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the shell materials can provide effective protection for the core Si against aqueous corrosion. ZnIn 2 S 4 , a ternary chalcogenide semiconductor with excellent physical and chemical properties, has attracted increasing attention in different fields, such as catalysis, thermoelectricity, and charge storage [19][20][21]. For example, it exhibits band gaps ranging from 2.38 to 3.02 eV, and the corresponding absorption peaks shift from the ultraviolet to the visible region [22].…”
Section: Introductionmentioning
confidence: 99%
“…Ternary sulfide ZnIn 2 S 4 , as the only member of AB 2 X 4 family semiconductors with a layered structure, has been found with great potential applications in different fields, such as thermoelectricity [12], photoconduction [13], charge storage [14], and so on. Since Lei et al firstly used ZnIn 2 S 4 as a visible-light-driven photocatalyst for hydrogen production [15], it triggered great interest in preparation or modification of ZnIn 2 S 4 to achieve high energy conversion efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…ZnIn 2 S 4 is the only member of the AB 2 X 4 family of semiconductors with a layered structure, and has attracted wide interests because of its potential applications in different fields such as charge storage [25], thermoelectricity [26], photocatalysis [27] and so on. This sulfide has been synthesized shape-controlly through a simple solvothermal/hydrothermal method using a surfactant as the template [28].…”
Section: Introductionmentioning
confidence: 99%