2013
DOI: 10.1039/c3nr00330b
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Charge storage and electron transport properties of gold nanoparticles decorating a urethane-methacrylate comb polymer network

Abstract: We propose enhanced charge storage capacity of nanoparticles based polymer films. A flat band voltage window varying from 5-7 V is obtained leading to a trapped charge density of the order of 10(13) cm(-2). These results vary for two distinct morphologies obtained due to decoration of a urethane-methacrylate comb polymer (UMCP) network by gold nanoparticles (AuNPs). Films have been further investigated for morphology, optical, charge storage, and electron transport properties using techniques like scanning ele… Show more

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Cited by 16 publications
(13 citation statements)
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“…In contrast, an obvious absorption peak appeared at 520 nm, typical for individual AuNPs of $13 nm. 30…”
Section: Characterization Of Rgo-cs Nanocomposites and Au Nanoparticlesmentioning
confidence: 99%
“…In contrast, an obvious absorption peak appeared at 520 nm, typical for individual AuNPs of $13 nm. 30…”
Section: Characterization Of Rgo-cs Nanocomposites and Au Nanoparticlesmentioning
confidence: 99%
“…At present, the consensus point of most researchers is that nanoparticles produce a large number of interfaces in the polymer, and these interfaces affect the dielectric properties of the materials by storing and transporting charge. [11][12][13] In the past decade, researchers had tried to establish various models to explain the dielectric constant, dielectric loss, space charge, conductance, breakdown, electric tree and corona resistance of nanocomposite dielectrics. [14][15][16] Typical models include the single-layer structure model proposed by Lewis,14 the multi-core model proposed by Tanaka et al 15 and a model towards understanding the physics proposed by Linda Schadler.…”
Section: Introductionmentioning
confidence: 99%
“…11) at R. T. In general, hysteresis behaviour in the capacitance-voltage plot gives a rst hand idea about the suitability of a device in charge storage applications. 44 Thus, here, the observed counterclock wise hysteresis is a clear signature of the charge-trapping phenomena and a positive shi in voltage ($2.7 V) indicates that those trapped charges are electrons only. 44 It's worth mentioning here that in the Ag/SiO 2 /Si junction, there no such hysteresis window is observed and it clearly indicates that charge trapping phenomena is nowhere involved in the SiO 2 and Si interface.…”
Section: C-v Characteristicsmentioning
confidence: 88%
“…44 Thus, here, the observed counterclock wise hysteresis is a clear signature of the charge-trapping phenomena and a positive shi in voltage ($2.7 V) indicates that those trapped charges are electrons only. 44 It's worth mentioning here that in the Ag/SiO 2 /Si junction, there no such hysteresis window is observed and it clearly indicates that charge trapping phenomena is nowhere involved in the SiO 2 and Si interface. Carrier injection model has been successfully employed to explain this kind of hysteresis curve and it is further inferred that the polarity of the bias voltage is fully responsible for the injection of electrons and holes.…”
Section: C-v Characteristicsmentioning
confidence: 88%