2010
DOI: 10.1103/physrevb.82.115206
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Charge states of a hydrogen defect with a local vibrational mode at3326cm1in ZnO

Abstract: An IR absorption study is presented of a hydrogen defect in ZnO that gives rise to a local vibrational mode at 3326 cm −1 ͓M. D. McCluskey et al., Appl. Phys. Lett. 81, 3807 ͑2002͔͒. It is shown that a subband gap illumination results in the appearance of a new IR absorption line at 3358 cm −1 at the expense of the main signal at 3326 cm −1 . Based on the anticorrelation between the two lines as well as on the results of isotope substitution experiments it is concluded that both signals are due to stretch mode… Show more

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Cited by 27 publications
(13 citation statements)
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“…A reappearance of the bond-centered hydrogen was reported previously for low temperature hydrogenated ZnO by Shi et al [32]. A similar behavior was observed after annealing ZnO samples at 400 • C for the zinc vacancy decorated with two hydrogen atoms and a hydrogen-related mode at 3326 cm −1 [7,33,34]. At the surface, however, interstitial hydrogen either outdiffuses or gets trapped by the subsurface oxygen vacancies thus accounting for the missing H BC in the Raman spectra [27].…”
Section: Isochronal Annealingsupporting
confidence: 80%
“…A reappearance of the bond-centered hydrogen was reported previously for low temperature hydrogenated ZnO by Shi et al [32]. A similar behavior was observed after annealing ZnO samples at 400 • C for the zinc vacancy decorated with two hydrogen atoms and a hydrogen-related mode at 3326 cm −1 [7,33,34]. At the surface, however, interstitial hydrogen either outdiffuses or gets trapped by the subsurface oxygen vacancies thus accounting for the missing H BC in the Raman spectra [27].…”
Section: Isochronal Annealingsupporting
confidence: 80%
“…8(a)] for the temperatures above 300 • C. A similar behavior was observed after annealing ZnO at 400 • C for the zinc vacancy passivated with one or two hydrogen atoms [6,14,59,60]. At 650 • C, bond-centered hydrogen (deuterium) reaches its maximum concentration but after annealing at 800 • C the defect is finally gone.…”
Section: Annealing Properties Of H Bc and H Osupporting
confidence: 59%
“…The annealing temperature of H BC depends on the amount of other hydrogen trapping centers and in pure material is determined solely by the formation rate of hydrogen molecules [14,15]. For concentrations of bond-centered hydrogen at 10 17 cm −3 , the annealing temperature was reported to be around 200 • C [7,16,17].…”
Section: Introductionmentioning
confidence: 99%
“…21 In particular, recent IR absorption studies suggest that V Zn H acts as a deep acceptor in ZnO and gives rise to the 3326 and 3358 cm −1 local vibrational modes (LVMs) assigned to the negative and the neutral charge states of the defect, respectively. 22 The ground state of V Zn H 2 comprises two nonequivalent O-H bonds. 11 One of them is aligned 10 • off the c axis of the crystal (OH ) and gives rise to a LVM at 3312.2 cm −1 .…”
Section: Introductionmentioning
confidence: 99%