Charge-spin current conversion in high quality epitaxial Fe/Pt systems: Isotropic spin Hall angle along different in-plane crystalline directions

Guillemard, Charles; Petit-Watelot, Sébastien; Andrieu, S.; Rojas-Sánchez, J.-C.

doi:10.1063/1.5079236

Cited by 24 publications

(22 citation statements)

References 38 publications

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“…On the contrary, eff SHE is almost constant ( eff SHE = 0.12 ± 0.02 and 0.11 ± 0.02 for J c ⊥ ε and ε = 0, respectively) when J c is not flowing along strain direction. It should be mentioned that the measured eff SHE is larger compared to that reported previously (around 0.05) [20,22,32], and we ascribe this to the presence of the Ta buffer layer, which has a negative spin Hall angle [17,18] thereby also contributing to the spin current density J s . Even if we do not consider the thickness of Ta, the calculated "effective" value involves the contribution of Ta.…”

Section: Strain-enhanced Charge-to-spin Conversioncontrasting

confidence: 62%

“…Thus, it explains the large value, approximately 0.12, we obtain in our devices without any strain. Similar enhancements of effective values in trilayers have also 044074-4 ), which is reliable only when H res > H sat [32]. (c) Strain dependence of the effective spin Hall angle.…”

Section: Strain-enhanced Charge-to-spin Conversionmentioning

confidence: 77%

“…Owing to the anisotropic magnetoresistance (AMR) effect, the oscillating magnetization gives rise to a timedependent resistivity, which mixes with the rf current and results in a rectified dc voltage. in a first approximation for the level of thicknesses in our samples [22,31,32]. We extract the symmetric and antisymmetric voltage contributions by fitting the spintorque ferromagnetic resonance spectra with the following equation, also considering an off-set V off [32]…”

Section: A St Fmr Measurementsmentioning

confidence: 99%

“…The spin Hall angle eff SHE is the ratio of spin current density J s to the rf current density J c, , which in the simplest model is proportional to the ratio of the symmetric voltage component over the antisymmetric one V symm /V anti . When the resonance field is larger than the saturation field (H res > H sat ), the precession of magnetization is considered to be uniform, as such eff SHE can be obtained by the following equation [11,22,31,32]…”

Section: Strain-enhanced Charge-to-spin Conversionmentioning

confidence: 99%

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Strain-Enhanced Charge-to-Spin Conversion in Ta/Fe/Pt Multilayers Grown on Flexible Mica Substrate

et al. 2019

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Recent demonstration of magnetization manipulation has been focused on the utilization of pure spin current converted by charge current in nonmagnetic materials with strong spin-orbit coupling (SOC), which stimulates intensive studies on the exploration of materials with larger SOC, such as heavy metals and topological insulators. We suggest an alternative approach for enhancing the effective charge-tospin conversion efficiency by applying strain in Ta/Fe/Pt films grown on flexible mica substrates. We experimentally demonstrate a large and tunable charge-to-spin conversion efficiency in Ta/Fe/Pt films by applying compressive strain within a flexible substrate, and over 50% enhancement of effective spin Hall angle eff SHE of up to approximately 0.2 is achieved in a 6.26‰ strained film. Our findings may spur further work on the integration of flexible electronics and SOC and may potentially lead to the innovation of alternative flexible spintronics devices.

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Section: Strain-enhanced Charge-to-spin Conversioncontrasting

confidence: 62%

Section: Strain-enhanced Charge-to-spin Conversionmentioning

confidence: 77%

Section: A St Fmr Measurementsmentioning

confidence: 99%

Section: Strain-enhanced Charge-to-spin Conversionmentioning

confidence: 99%

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Strain-Enhanced Charge-to-Spin Conversion in Ta/Fe/Pt Multilayers Grown on Flexible Mica Substrate

et al. 2019

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“…The situation is a little more complex in the conversion of charge current to spin current and spin torque by a direct SHE or direct Edelstein effect in spin torque ferromagnetic resonance [12,[29][30][31][32][33] or second harmonic technique experiments [34][35][36][37][38][39][40]. From the interpretation of the data, the experimentalist knows the spin current accommodated by the ferromagnet after coming from the heavy metal through the interface.…”

Section: Charge-to-spin Current Conversion: Spin Hall Effect Vs Ementioning

confidence: 99%

Compared Efficiencies of Conversions between Charge and Spin Current by Spin-Orbit Interactions in Two- and Three-Dimensional Systems

Rojas-Sánchez

Fert

2019

Phys. Rev. Applied

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Conversions between charge and spin currents by spin-orbit interactions have become usual in today's spintronics, either by using the spin Hall effect (SHE) and inverse spin Hall effect (ISHE) of heavy metals or the Edelstein effect and inverse Edelstein effect of a two-dimensional (2D) electron gas. These conversions can be characterized by the spin Hall angle for SHE or ISHE and by the conversion parameters q IC for EE and λ IEE for IEE. Using typical experimental values of these different parameters for heavy metals and 2D electrons of topological insulators (TIs), we show that, compared to heavy metals, the TIs lead to a gain of about an order of magnitude in the conversion between spin to charge or charge to spin currents and even more in the production of voltage or electrical power by conversion of spin currents. Thus, we anticipate a giant spin Seebeck power generated in devices designed with an insulating magnetic layer and 2DEGs of a TI as α-Sn or Rashba 2DEGs. We also discuss the detrimental role of additional shunts in these conversion experiments.

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Current‐Induced Spin Torques on Single GdFeCo Magnetic Layers

et al. 2021

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A novel direction of spintronics, namely "spin-orbitronics", exploits the spin-orbit coupling (SOC) to generate spin currents, which can then induce spin-orbit torques (SOT) to manipulate magnetization. [1] This opens technological applications such as the three-terminal magnetic random memory Spintronics exploit spin-orbit coupling (SOC) to generate spin currents, spin torques, and, in the absence of inversion symmetry, Rashba and Dzyaloshinskii-Moriya interactions. The widely used magnetic materials, based on 3d metals such as Fe and Co, possess a small SOC. To circumvent this shortcoming, the common practice has been to utilize the large SOC of nonmagnetic layers of 5d heavy metals (HMs), such as Pt, to generate spin currents and, in turn, exert spin torques on the magnetic layers. Here, a new class of material architectures is introduced, excluding nonmagnetic 5d HMs, for high-performance spintronics operations. Very strong current-induced torques exerted on single ferrimagnetic GdFeCo layers, due to the combination of large SOC of the Gd 5d states and inversion symmetry breaking mainly engineered by interfaces, are demonstrated. These "self-torques" are enhanced around the magnetization compensation temperature and can be tuned by adjusting the spin absorption outside the GdFeCo layer. In other measurements, the very large emission of spin current from GdFeCo, 80% (20%) of spin anomalous Hall effect (spin Hall effect) symmetry is determined. This material platform opens new perspectives to exert "self-torques" on single magnetic layers as well as to generate spin currents from a magnetic layer.

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Charge-spin current conversion in high quality epitaxial Fe/Pt systems: Isotropic spin Hall angle along different in-plane crystalline directions

Cited by 24 publications

References 38 publications

Strain-Enhanced Charge-to-Spin Conversion in Ta/Fe/Pt Multilayers Grown on Flexible Mica Substrate

Strain-Enhanced Charge-to-Spin Conversion in Ta/Fe/Pt Multilayers Grown on Flexible Mica Substrate

Compared Efficiencies of Conversions between Charge and Spin Current by Spin-Orbit Interactions in Two- and Three-Dimensional Systems

Current‐Induced Spin Torques on Single GdFeCo Magnetic Layers

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