Charge Redistribution in Mg-Doped p-Type MoS₂/GaN Photodetectors

Abstract

MoS2/GaN p–n heterojunction photodetectors with enhanced built-in electric field have paved the way for nanoelectronic and nano-optoelectronic applications. However, the realization of p-type MoS2/n-type GaN p–n heterostructures is still challenging because of the complex and unstable preparation process of p-type MoS2. Herein, Mg-doped p-type MoS2/GaN p–n heterojunctions have been synthesized via a two-step method involving electron beam evaporation and chemical vapor deposition. First-principles calculations based on density functional theory reveal that the substituted Mg atoms induce ample holes. Compared with the unintentionally doped devices, the Mg-doped p-type MoS2/GaN heterojunctions show an inverted internal electric field, a responsivity of 260 mA/W at 365 nm and 2 V, and a fast response (a rise/fall time of <20/20 ms at 365 nm and 2 V). Consequently, this study proposes an efficient strategy for preparing p-type MoS2/GaN heterojunctions for applications in nanoelectronic and nano-optoelectronic devices.

Heteroatom-Doped Molybdenum Disulfide Nanomaterials for Gas Sensors, Alkali Metal-Ion Batteries and Supercapacitors

“…In this case, electron energy loss spectroscopy (EELS) at the single-atom level can help identify the element and its local atomic configurations [82,83]. Studies showed that some elements tend to form clusters, among them Co [82], Te [84], Re with a concentration below 1 at% [85,86], Se [87], W [88,89], Mn [90], Mg [91], Sb [92], and Ru [93] are distributed randomly regardless of concentration. Figure 5a shows an example of the identification of two different Co defects in a MoS 2 monolayer by the HAADF/STEM method.…”

“…Doping causes a shift of the Fermi level of the compound, resulting in a change in the binding energy of the core-level electrons as compared to the undoped compound [96]. For example, a decrease in the binding energy of the Mo 3d 5/2 and S 2p 3/2 components was observed for MoS 2 doped with Mg [91], Ru [93], N [97], and Nb [98,99], while the introduction of Re [86] or Se [87] substituents resulted in an increase in the binding energies.…”

Biocompatible Silica‐Coated Europium‐Doped CsPbBr3 Nanoparticles with Luminescence in Water for Zebrafish Bioimaging

“…), or polymer matrix. [ 19–27 ] Wherein, SiO 2 coating process is relatively mature and has been widely used for surface modification of nanoparticles (NPs) to improve stability and biocompatibility, as well as to reduce the toxicity. Surface coating silica has been proved to be an effective strategy to improve the stability of CsPbBr 3 NCs in water.…”

Synthesis of continuous MoS2:Er films and their enhanced NIR photoresponse for photo communication

“…9 Doping technology is one of the effective means of modulating the optical and electrical properties of semiconductors. Several doping strategies, including charge transfer doping, 10 electrostatic doping, 11 and element doping, 12 have been proposed for MoS 2 to improve its NIR photoresponse. Element doping, i.e.…”

“…9 Doping technology is one of the effective means of modulating the optical and electrical properties of semiconductors. Several doping strategies, including charge transfer doping, 10 electrostatic doping, 11 and element doping, 12 have been proposed for MoS 2 to improve its NIR photoresponse. Element doping, i.e., introducing a dopant into the host, results from the added impurity energy levels 13 and trap states 14 or the altered electron transport characteristics.…”