IntroductionSolid-state approach offers the promising way to integrate a large number of quantum bits (qubits) to realize quantum computers. Double Quantum Dots (DQDs) have been extensively studied as a candidate for the charge qubit. Early DQD research has been done for GaAs/AlGaAs hetero-structures [1], but silicon based DQDs have recently been fabricated using the top-down fabrication technique, and a long decoherence time has been demonstrated [2]. Silicon based DQDs are also preferred because of their compatibility with the existing silicon fabrication process. Decoherence time of the qubit should be extended further for accomplishing fault tolerant quantum computation. It has also been studied to adopt nanocystalline Si DQDs deposited by VHF plasma deposition technique for realizing extremely downscaled charge qubits [3].Another key issue is to integrate multiple charge qubits with a suitable readout device. We recently proposed multiple single-electron transistors (MSETs) [4], where SETs are connected in series, for sensing single-charge polarization over the multiple qubits. In this paper we fabricate and evaluate a double single-electron transistor (DSET) (Fig. 1) to clarify the readout scheme. In the DSET configuration, qubits operation is controlled via electrodes (G3-G7), and the gate electrodes G1 and G2 are used to manipulate the electrochemical potentials on the SET islands. We demonstrate how different single-charge configurations on a pair of DQDs are sensed by using the DSETs by using the measured electrical characteristics for the DSET and the equivalent circuit simulation.