Charge pumping in MOS devices

Brugler, J.S.; Jespers, Paul

doi:10.1109/t-ed.1969.16744

Cited by 460 publications

(161 citation statements)

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“…3. However, as demonstrated previously [13,14], Icp continues to increase, albeit at a much slower rate. This increase with ΔVG is routinely attributed to slower oxide traps ΔNot and Icp = I it cp +I ot cp [11,15].…”

Section: A Dependence On Gate Voltage Low-levelsupporting

confidence: 79%

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

Hehenberger

Aichinger²,

Grasser

et al. 2009

2009 IEEE International Reliability Physics Symposium

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Abstract-Data obtained by the recently developed on-the-fly chargepumping technique has suggested a fast initial degradation and recovery of interface states during negative and/or bias temperature stress, contrary to previously published results. By revising the analysis of the measurement setup, fast interface state creation and recovery are revealed as artifact due to a different amount of oxide traps seen during the stress and relaxation phases. From this analysis we conclude that data gathered during stress and recovery phases must not be directly compared. By properly taking the contribution of (slow) oxide charges into account, which leads to a spurious increase of the charge-pumping current during the stress phase, we demonstrate that no fast initial degradation and no fast recovery of interface states occurs. Nevertheless, the charge-pumping signal is sensitive to the continuous switching of the gate voltage into accumulation, which also accelerates interface state recovery, albeit at a slower rate. We finally conclude that both the fast initial degradation and the fast initial recovery seem to be due to oxide charges. Therefore these oxide charges need to be considered. By performing simulations with our device simulator Minimos-NT using a modified Shockley-ReadHall model it was possible to reproduce the effect of these oxide charges. For this purpose a temperature and field activated tunneling process is assumed and results in proper agreement of measurement and simulation. A correction scheme for the on-the-fly charge-pumping measurement technique is then presented.

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Section: A Dependence On Gate Voltage Low-levelsupporting

confidence: 79%

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

Hehenberger

Aichinger²,

Grasser

et al. 2009

2009 IEEE International Reliability Physics Symposium

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show abstract

“…This causes the "geometric component" of the charge pumping current that adds to the current due to interface traps. 5 Understanding the fundamental process through which charge pumping occurs is important because several of the underlying assumptions that are normally valid for Si MOSFETs do not hold for SiC MOSFETs as will be shown in this paper. SiC's large bandgap and its high density of interface traps impede the flow of free minority carriers between the source/drain and channel.…”

Section: The Charge Pumping Techniquementioning

confidence: 99%

Light emission from interface traps and bulk defects in SiC MOSFETs

Stahlbush

Macfarlane

2001

Journal of Elec Materi

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“…As opposed to the SMG technique, the charge-pumping (CP) technique does not give changes in charge densities in oxide and in interface traps, but is used solely to determine interface traps density while charge density in oxide can be subsequently determined on the basis of the expression (29) under the condition that the change in threshold voltage is known [20,21,104]. The charge-pumping effect can be explained on the basis of the diagram shown in Figure 6 [104].…”

Section: Charge-pumping Techniquementioning

confidence: 99%