Charge pumping and DCIV currents in SOI FinFETs

Zhang, E.X.; Fleetwood, D.M.; Francis, S.A.; Zhang, C.X.; El-Mamouni, F.; Schrimpf, R.D.

doi:10.1016/j.sse.2012.05.043

Cited by 9 publications

(7 citation statements)

References 14 publications

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“…For the devices and measurement conditions of this study, these estimates are obtained readily from measurements performed at frequencies at or below 300 kHz, on FinFETs with gate length less than ~100 nm and fin width less than ~70 nm, with low gate leakage current (~100 pA or less). These results significantly extend previous work (2), in which only stress-induced estimates of interface-trap densities were demonstrated.…”

Section: Resultssupporting

confidence: 88%

“…In all cases, the current reaches a maximum when the body potential transitions from accumulation to inversion in response to the applied gate bias and the body-to-source and body-to-drain diodes become forward biased. For the longer channel devices, the electric field in the body of the FinFET is reduced in magnitude, which decreases the measured DCIV (2). Similar trends are observed in imec devices with 65 nm fin width, as shown in Fig.…”

Section: Methodssupporting

confidence: 76%

“…In (2), it was shown that a convenient method of focusing on the recombination currents associated with interface traps in these structures is to subtract the DCIV from the ACIV, as is done in Fig. 9 for imec FinFETs with (a) 5 nm fin width and (b) 40 nm fin width.…”

Section: A Gate Length and Fin Width Dependencementioning

confidence: 99%

“…1). The currents flow in response to carrier capture and/or emission from interface traps, and/or charge generation and recombination in the depletion regions at the body-to-drain and body-to-source junctions (2). The device characteristics and measuring conditions that enable one to observe reliable and reproducible ACIV and DCIV currents in conventional, three terminal floating-body FinFETs are not well understood.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs

et al. 2013

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We have evaluated the effects of device geometry and frequency on DCIV and ACIV (charge pumping) currents in development-stage SOI finFETs with floating bodies that are built in two process technologies. Both the DCIV and ACIV currents are much smaller in devices for which the gate length exceeds ~100 nm or the fin width exceeds ~70 nm. ACIV currents are approximately linear with frequency up to ~300 kHz for the devices and measurement conditions used in this study. ACIV estimates of effective interface-trap densities for relatively short-channel, narrow-fin devices in each technology are ~4 × 1011 cm-2.

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Section: Resultssupporting

confidence: 88%

Section: Methodssupporting

confidence: 76%

Section: A Gate Length and Fin Width Dependencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs

et al. 2013

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“…The characterization of back interface properties in SOI transistors remains a challenge [13], [14]. The direct-current current-voltage (DCIV) technique proposed by Sah and Jie in 1995 [15] has been employed for the measurement of back-channel interface traps in SOI devices [16], [17]. The superiority of DCIV technique over conventional methods is that the method has access to the energy distribution of interface trap density nearby midgap besides interface trap density and its equivalent energy level [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO 2 back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current current-voltage technique. When transistors are subjected to radiation, DCIV bulk current increases. The calculated results suggest that the interface trap density increases and its equivalent energy level is far away from the midgap with irradiation dose increasing, which can be explained by the energy distribution of interface traps. The interface trap energy density D IT (E IT ) as a function of the energy level E IT has been obtained by the least square optimization and shows the typical ''U-shape'' distribution. In detail, the rising humps at equivalent energy level in D IT (E IT ) curves are due to Si-H bonds that are broken down after irradiation, which corresponds to the increasing trap density. Moreover, it is found that the energy level of interface traps is redistributed after irradiation. The peak of humps in D IT (E IT ) curves occurs at the farther energy level with the increase of dose, which is similar to the equivalent energy level. It might arise from the shallow energy level of interface traps induced by radiation.INDEX TERMS SOI, interface traps, radiation, energy distribution.

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Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs

Janković

Young

2016

Microelectronics Reliability

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Charge pumping and DCIV currents in SOI FinFETs

Cited by 9 publications

References 14 publications

Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs

Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs

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