Charge Plasma High Voltage PIN Diode Investigation

Kumar, M. Jagadesh; Hahmady, Sara; Gale, Richard; Bayne, Stephen

doi:10.1109/ipmhvc.2018.8936701

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…Nanoscale p-n diode was a primary device that is designed and fabricated applying this technique [3], [4], [5]. Doping-less bipolar transistors (BJTs), Schottky collector bipolar transistor without impurity doped emitter and base [6], [7], [8], [9], laterally singled-diffused metal oxide semiconductor, Junction-less Impact Ionization MOS, Doping-less tunnel field effect transistor and high voltage devices such as strained super-junction vertical single diffused MOSFET, silicon-based 50 V p-i-n diode [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20], [21], [22] are designed utilizing charge plasma concept which not only reduces the process of fabrication, but in some cases results in a better performance as compared with the conventional (doped) counterparts.…”

Section: Introductionmentioning

confidence: 99%

Doping-Less SiC p-i-n Diode: Design and Investigation

Hahmady

Bayne

2021

IEEE Access

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We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of the work-function difference between silicon carbide and metal electrodes. Utilizing the 2-D TCAD simulation, we represent the performance of the proposed doping-less silicon carbide p-i-n diode is analogous to the silicon carbide Schottky diode in terms of forward and reverse characteristics as well as temperature dependency. As opposed to the conventional (doped) silicon carbide p-i-n diode, the doping-less silicon carbide p-i-n diode holds a lower ON-state voltage drop and higher reverse saturation current. Although the doping-less silicon carbide p-i-n diode has the merits of the silicon carbide Schottky diode, but it has leverage over the corresponding counterparts by eliminating the doping and the high thermal budget fabrication processes.INDEX TERMS charge plasma, doping-less, p-i-n diode, temperature dependency,

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Section: Introductionmentioning

confidence: 99%

Doping-Less SiC p-i-n Diode: Design and Investigation

Hahmady

Bayne

2021

IEEE Access

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“…Nano scale p-n diodes have been designed and fabricated using charge plasma concept [2], [3], [4]. Lateral and vertical bipolar junction transistors (BJTs) [5], [6], [7], [8], LSMOS, SJ VSDMOS, transistirs, Bi-directional Junction-less Transistor, PIN diode, IMOS, TFETs [9], [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20]. The CP approach not only reduces the fabrication complexity but also results in an improved performance.…”

Section: Introductionmentioning

confidence: 99%

Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode

Hahmady

Bayne

2020

IEEE Access

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In this paper, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors "p" and "n" plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.

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Analysis of Nonlinear Processes in the P-I-N Diodes Plasma by the Perturbation Theory Methods

Bomba,

Moroz

2023

2023 13th International Conference on Advanced Computer Information Technologies (ACIT)

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Charge Plasma High Voltage PIN Diode Investigation

Cited by 3 publications

References 16 publications

Doping-Less SiC p-i-n Diode: Design and Investigation

Doping-Less SiC p-i-n Diode: Design and Investigation

Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode

Analysis of Nonlinear Processes in the P-I-N Diodes Plasma by the Perturbation Theory Methods

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