Charge-order-enhanced capacitance in semiconductor moiré superlattices

Li, Tingxin; Zhu, Juntao; Tang, Yanhao; Watanabe, Kenji; Taniguchi, Takashi; Elser, Veit; Shan, Jie; Mak, Kin Fai

doi:10.1038/s41565-021-00955-8

Cited by 50 publications

(17 citation statements)

References 45 publications

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“…As a result, the ground state in this regime at integer filling n is an insulating array of n-electron moiré atoms located at the moiré potential minima, which is adiabatically connected to the decoupled limit a M → ∞. In this regard, we note that insulating states at integer filling fillings up to n = 8 have been observed in the conduction band of an MoSe 2 /WS 2 moiré superlattice [31].…”

mentioning

confidence: 66%

Moiré alchemy: artificial atoms, Wigner molecules, and emergent Kagome lattice

Reddy¹,

Devakul²,

Fu³

2023

Preprint

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Semiconductor moiré superlattices comprise an array of artificial atoms and provide a highly tunable platform for exploring novel electronic phases. We introduce a theoretical framework for studying moiré quantum matter that treats intra-moiré-atom interactions exactly and is controlled in the limit of large moiré period. We reveal an abundance of new physics arising from strong electron interactions when there are multiple electrons within a moiré unit cell. In particular, at filling factor n = 3, the Coulomb interaction within each three-electron moiré atom leads to a threelobed "Wigner molecule". When their size is comparable to the moiré period, the Wigner molecules form an emergent Kagome lattice. Our work identifies two universal length scales characterizing the kinetic and interaction energies in moiré materials and demonstrates a rich phase diagram due to their interplay.

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mentioning

confidence: 66%

Moiré alchemy: artificial atoms, Wigner molecules, and emergent Kagome lattice

Reddy¹,

Devakul²,

Fu³

2023

Preprint

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“…235 order-enhanced capacitance in MoSe 2 /WS 2 moire ´superlattices, where the gate capacitance of devices based on TMD moire śuperlattices with low carrier density highly depends on the filling factors spanning up to four electron moire ´minibands. 273 Periodic in-plane moire ´potential may also induce specific in-plane conducting channels. 274 Considering the moire…”

Section: Property Transformationsmentioning

confidence: 99%

“…Li et al observed charge-order-enhanced capacitance in MoSe 2 /WS 2 moiré superlattices, where the gate capacitance of devices based on TMD moiré superlattices with low carrier density highly depends on the filling factors spanning up to four electron moiré minibands. 273 Periodic in-plane moiré potential may also induce specific in-plane conducting channels. 274 Considering the moiré-periodicity-dependent effective carrier mass and band alignment, it is still challenging for researchers to investigate the electrical properties of TMD moiré heterostructures.…”

Section: Properties and Applications Of 2d Tmds With Modulated Struct...mentioning

confidence: 99%

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

et al. 2023

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“…Moreover, Moiré superlattices with geometric chirality were also observed from the SnS 2 /WSe 2 vdWH nanoscrolls, further demonstrating the designability of the rolling-up process for band structure. [26] It is inspiring enough that 2D Moiré superlattices of vdW materials have aroused extensive attention as strongly correlated electronic systems (extra Bragg reflection of electrons would occur, caused by the periodicity potential field of Moiré superlattices, [41] with the result that the flat bands are induced. The electron-electron interaction is enhanced and then non-negligible, [42] and that is the so-called correlated electronic state), [41][42][43][44] while the highorder Moiré superlattices these nanoscrolls provide have never been realized ever before, so the correlated electronic states in them are more worthy of further study.…”

Section: Structural Evolution and Mechanismmentioning

confidence: 99%

Emerging Nonplanar van der Waals Nanoarchitectures from 2D Allotropes for Optoelectronics

Ouyang

Zhang

et al. 2022

Adv Funct Materials

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The unique atomic thickness and mechanical flexibility of 2D van der Waals (vdW) materials endow them with spatial designability and constructability. It is easy to break the inherent planar construction through various spatial manipulations, thus creating vdW nanoarchitectures with nonplanar topologies. The basic properties before evolution are retained and tunable by architecture‐related feature sizes, and other newly generated properties are inspiring as they are beyond the reach of 2D allotropes, bringing great competitiveness for their encouraging applications in optoelectronics. Here, these representative nonplanar vdW nanoarchitectures (i.e., nanoscrolls, nanotubes, spiral nanopyramids, spiral nanowires, nanoshells, etc.) are summarized and their structural evolution processes are elucidated. Their fascinating nascent properties based on their distinctive structural features, focusing on generally enhanced light–matter interactions and device physics, are further introduced. Finally, their opportunities and challenges for in‐depth experimental exploration are prospected. It is a brand‐new idea to modify the properties of 2D vdW materials from micro‐ and nanostructural design and evolution, offering a solid platform for twistronics, valleytronics, and integrated nanophotonics.

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Charge-order-enhanced capacitance in semiconductor moiré superlattices

Cited by 50 publications

References 45 publications

Moiré alchemy: artificial atoms, Wigner molecules, and emergent Kagome lattice

Moiré alchemy: artificial atoms, Wigner molecules, and emergent Kagome lattice

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Emerging Nonplanar van der Waals Nanoarchitectures from 2D Allotropes for Optoelectronics

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