Charge injection transistor based on real-space hot-electron transfer

Luryi, Serge; Kastalsky, A.; Gossard, A. C.; Hendel, R.

doi:10.1109/t-ed.1984.21616

Cited by 101 publications

(11 citation statements)

References 9 publications

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“…1,2 Soon afterward, RST found applications in three-terminal devices, i.e., field-effect transistors and charge-injection transistors. 3,4 In recent years, the applications of RST have expanded significantly, [5][6][7][8][9][10][11][12][13] leading to the development of new functional devices, including multiterminal device structures, which have shown promise as logic devices, microwave sources, memory elements, and electroluminescent devices. However, in these devices, RST is restricted to the classical regime.…”

Section: Rui Q Yang A)mentioning

confidence: 99%

Quantum real-space transfer in semiconductor heterostructures

Yang

1998

Applied Physics Letters

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Section: Rui Q Yang A)mentioning

confidence: 99%

Quantum real-space transfer in semiconductor heterostructures

Yang

1998

Applied Physics Letters

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“…A number of highspeed electronic and optoelectronic devices have been proposed based on this principle [3][4][5][6][7]. The generic RST transistor [8] is a three-terminal device (see the inset to Fig. 1) consisting of a channel with two contacts, S and Z>, and an individually contacted collector C, separated from the channel by a heterojunction barrier.…”

Section: Serge Luryi and Mark R Pinto A Tand T Bell Laboratories Murrmentioning

confidence: 99%

Broken symmetry and the formation of hot-electron domains in real-space-transfer transistors

Luryi

Pinto

1991

Phys. Rev. Lett.

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Real-space-transfer (RST) transistors are studied theoretically. In a symmetric configuration, with no voltage applied between the channel electrodes, we find anomalous steady states in which the RST is driven by the fringing field from the collector electrode. Some of these states are unconditionally stable and hence accessible experimentally. Our study elucidates the formation of hot-electron domains, which is shown to be a discontinuous process that passes the control of electron heating from the drain to the collector. Multiply connected current-voltage characteristics are predicted. PACS numbers: 73.50.Fq, 73.40.Kp, 73.50.Lw The concept of real-space transfer (RST) refers to a process in which electrons in a narrow semiconductor layer are heated by a parallel field and spill over an energy barrier into adjacent layers [1,2]. A number of highspeed electronic and optoelectronic devices have been proposed based on this principle [3][4][5][6][7]. The generic RST transistor [8] is a three-terminal device (see the inset to Fig. 1) consisting of a channel with two contacts, S and Z>, and an individually contacted collector C, separated from the channel by a heterojunction barrier. In the normal operation, the channel electrons are heated by the lateral field due to a voltage V D applied between S and D. The resultant RST leads to highly nonlinear effects, including a strong negative differential resistance (NDR) with sharp steps, indicative of an internal switching and the formation of high-field domains [4,9,10]. These processes are not well understood, even though RST transistors have been extensively studied, both experimentally and theoretically [11].The RST transistor is symmetric with respect to reflections in the midplane normal to channel. Hence states of the device at an external bias [Vo.Vc] are related to those at [-Vo,(Vc~ VO)]-In particular, states at Vo -0 must either be symmetric or possess brokensymmetry partners. An important discovery of the present work is the existence of a number of such states, some of which are not only stationary but also stable with respect to small perturbations. In these "anomalous" states [12], the electron heating is due to the fringing field from the collector electrode. Our study shows that the formation of hot-electron domains at Vo > 0 represents a transition to a collector-controlled state that is continuously related to one of the anomalous states at V D =0.The tool of our study is a numerical simulation of the hot-electron transport in a three-terminal RST structure. Details of the program and computational methods are described elsewhere [13,14]. The analysis is based on the solution of a set of coupled partial differential equations, including Poisson's equation and expressions [15] for current continuity and energy balance, in a two-dimensional sample, subject to boundary conditions at the three electrodes. Models for the local hot-electron mobility n(T e ) and the energy relaxation time r E (T e ) are chosen so that in a uniform electric field F, one obtai...

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“…The real space transfer transistor (RSTT) [1] is also named negative-resistance field-effect transistor (NERFET) [2], and is also called charge injection transistor (CHINT) [2]. It is a kind of field effect transistor with negative differential resistance (NDR) characteristic in I DS .…”

Section: Introductionmentioning

confidence: 99%

“…The real space means the current channel or current layer. The earlier RSTT has dual current channels, the first channel is between source and drain, and the second channel is nearby the substrate under the gate electrode [1].…”

Section: Introductionmentioning

confidence: 99%

Design, fabrication and characterization of dual-channel real space transfer transistor

Guo

Zhang

2009

Front. Electr. Electron. Eng. China

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In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (V GS ). For example, the PVCR varies from 2.1 to 10.6 while V GS changes from 0.6 V to 1.0 V. The transconductance for I P (ΔI P =ΔV GS ) is 0.3 mS. The parameters of V P , V V and threshold gate voltage (V T ) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application.

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Charge injection transistor based on real-space hot-electron transfer

Cited by 101 publications

References 9 publications

Quantum real-space transfer in semiconductor heterostructures

Quantum real-space transfer in semiconductor heterostructures

Broken symmetry and the formation of hot-electron domains in real-space-transfer transistors

Design, fabrication and characterization of dual-channel real space transfer transistor

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