Charge emission and precursor accumulation in the multiple-pulse damage regime of silicon

Jhee, Youn Kyu; Becker, MF; Walser, R. M.

doi:10.1364/josab.2.001626

Cited by 28 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The laser-exposed Si substrate contained micron-sized surface features and tiny holes when repeatedly irradiated with laser pulses. Similar laser-induced surface features on Si have been reported elsewhere [20,21]. At a low pulse energy (0.5 µJ), an intact and well-defined SiC rotor was patterned (figure 3(c)).…”

Section: Patterning Of 3c-sic Thin Filmssupporting

confidence: 81%

Femtosecond pulsed laser micromachining of single crystalline 3C–SiC structures based on a laser-induced defect-activation process

Dong

Zorman

Molian

2003

J. Micromech. Microeng.

View full text Add to dashboard Cite

A femtosecond pulsed Ti:sapphire laser with a pulse width of 120 fs, a wavelength of 800 nm and a repetition rate of 1 kHz was employed for direct write patterning of single crystalline 3C–SiC thin films deposited on Si substrates. The ablation mechanism of SiC was investigated as a function of pulse energy. At high pulse energies (>1 µJ), ablation occurred via thermally dominated processes such as melting, boiling and vaporizing of single crystalline SiC. At low pulse energies, the ablation mechanism involved a defect-activation process that included the accumulation of defects, formation of nano-particles and vaporization of crystal boundaries, which contributed to well-defined and debris-free patterns in 3C–SiC thin films. The interactions between femtosecond laser pulses and the intrinsic lattice defects in epitaxially grown 3C–SiC films led to the generation of nano-particles. Micromechanical structures such as micromotor rotors and lateral resonators were patterned into 3C–SiC films using the defect-activation ablation mechanism.

show abstract

Section: Patterning Of 3c-sic Thin Filmssupporting

confidence: 81%

Femtosecond pulsed laser micromachining of single crystalline 3C–SiC structures based on a laser-induced defect-activation process

Dong

Zorman

Molian

2003

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…2(c)]. The formation of pits at this number of pulses was analogous to the previous observation by Jhee et al 2 at the beginning of the surface damage of silicon using picosecond laser pulses and could be explained by the evaporation of silicon through accumulation of laser energy. As shown later, more pits were created at a higher number of pulses.…”

Section: Surface Damage At a High Number Of Pulsessupporting

confidence: 86%

“…As such, although the laser fluence employed here was of 0.03 J/cm 2 , one order of magnitude lower than the fatigue limit reported by Jhee et al 2 for the long pulse laser, it was not surprising to have observed surface damage with an increasing number of laser pulses, as shown in Fig. 1(b).…”

Section: Surface Damage At a Low Number Of Pulsesmentioning

confidence: 52%

“…This effect was observed in many materials for both long and short pulse lasers. 1,2,6-8 Jhee et al 2 observed this incubation effect on silicon irradiated with picosecond laser pulses. They suggested that damage precursors by multiple pulses were due to the long-lived excitations or accumulation of permanent states.…”

Section: Surface Damage At a Low Number Of Pulsesmentioning

confidence: 90%

See 1 more Smart Citation

Surface Damage of Crystalline Silicon by Low Fluence Femtosecond Laser Pulses

et al. 2004

View full text Add to dashboard Cite

Crystalline silicon kept at atmospheric pressure was irradiated with 775 nm multiple laser pulses of 150 fs duration at repetition rate 250 Hz. The laser pulses were circularly polarized, with a peak laser fluence of 0.03 J/cm 2 . We observed surface damage at a much lower fluence and lower number of pulses compared to that reported in the literature. Surface damage, cracks and pits formation were observed. The evolution of the surface damage as a function of the number of laser pulses was recorded. The observations were in contrast to the findings in the literature that the silicon surface became structured when irradiated by multiple pulses.

show abstract

“…At a repetition rate of f rep,max = 50 kHz, the delay of one laser annealing pulse to the next is ∆t ≥ 20µs. At this frequency no thermal accumulation occurs for the comparably low fluences and incubation effects are also not present in silicon for a pulse duration of 25 ns and a repetition rate of f rep < 50 kHz [13]. The lifetime increase reaches a maximum for 50% pulse overlap in case of the random pyramid textured samples.…”

Section: Reflectance Analysismentioning

confidence: 85%

Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces

et al. 2012

View full text Add to dashboard Cite

This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area

show abstract

Charge emission and precursor accumulation in the multiple-pulse damage regime of silicon

Cited by 28 publications

References 8 publications

Femtosecond pulsed laser micromachining of single crystalline 3C–SiC structures based on a laser-induced defect-activation process

Femtosecond pulsed laser micromachining of single crystalline 3C–SiC structures based on a laser-induced defect-activation process

Surface Damage of Crystalline Silicon by Low Fluence Femtosecond Laser Pulses

Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces

Contact Info

Product

Resources

About