Charge Detection in an Array of CMOS Quantum Dots

Chanrion, Emmanuel; Niegemann, David J.; Bertrand, Benoît; Spence, Cameron; Jadot, Baptiste; Li, Jing; Mortemousque, Pierre-André; Hutin, Louis; Maurand, Romain; Jehl, X.; Sanquer, M.; Franceschi, S. De; Bäuerle, Christopher; Balestro, Franck; Niquet, Yann-Michel; Vinet, M.; Meunier, Tristan; Urdampilleta, Matias

doi:10.1103/physrevapplied.14.024066

Cited by 63 publications

(61 citation statements)

References 37 publications

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“…We have also tested device stability, including charge noise (see “Methods” section) and reproducibility upon multiple thermal cycles from room temperature to base temperature (see Supplementary Table S2 ). In conjunction with complementary experiments in various other laboratories using similar LETI devices from the same fabrication run 14 , 18 , 34 , 35 , these results constitute key steps towards fault-tolerant quantum computing based on scalable, gate-defined quantum dots.…”

Section: Discussionmentioning

confidence: 63%

“…S1 and refs. 17 , 18 ), we focus on a 2 × 2 quantum-dot array as the smallest two-dimensional unit cell in this architecture, that is, a device with two pairs of split-gate electrodes, labeled G i with corresponding control voltages V i . The device studied is similar to the one shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The device is configured as a single quantum dot and the current flow is measured in the presence of a small source–drain voltage. Due to Coulomb blockade, current peaks as a function of gate voltage can then be used to measure the effective gate-voltage noise, by measuring the noise spectrum of the current and converting it to gate-voltage noise based on the first derivative of current with respect to gate voltage 18 . Using the gate-voltage lever arm, we convert the inferred gate-voltage noise into an effective noise in the chemical potential of the quantum dot, yielding ~1.1 μeV/ at 1 Hz.…”

Section: Methodsmentioning

confidence: 99%

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Single-electron operations in a foundry-fabricated array of quantum dots

et al. 2020

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Silicon quantum dots are attractive for the implementation of large spin-based quantum processors in part due to prospects of industrial foundry fabrication. However, the large effective mass associated with electrons in silicon traditionally limits single-electron operations to devices fabricated in customized academic clean rooms. Here, we demonstrate single-electron occupations in all four quantum dots of a 2 x 2 split-gate silicon device fabricated entirely by 300-mm-wafer foundry processes. By applying gate-voltage pulses while performing high-frequency reflectometry off one gate electrode, we perform single-electron operations within the array that demonstrate single-shot detection of electron tunneling and an overall adjustability of tunneling times by a global top gate electrode. Lastly, we use the two-dimensional aspect of the quantum dot array to exchange two electrons by spatial permutation, which may find applications in permutation-based quantum algorithms.

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Section: Discussionmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Single-electron operations in a foundry-fabricated array of quantum dots

et al. 2020

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“…This leads to the unique transfer and output characteristics, such as Coulomb blockade oscillation (CBO) and negative differential conductance (NDC), respectively [6][7][8][9][10][11][12][13][14][15]. For example, the precise control of the single-electron (or even single-spin) transport characteristics was demonstrated on various types of semiconductor QD-based DTJ and MTJ device schemes (e.g., room temperature observation of multiple CBO peaks from multiple quantum states in a Si single-QD device [10], simultaneous observation of both sharp CBO and NDC peaks from a Si-QD DTJ device [9][10][11][12][13][14], bias voltage-controlled precise modulation of energetic Coulomb blockade conditions in a Si single-QD transistor [8], high-fidelity q-bit processing in Si MQD [16][17][18][19] and GaAs MQD [20][21][22] devices). Such an extremely high precision of the single-charge manipulation could enable us to extend the SET application toward the broad area of the sensing metrology.…”

Section: Introductionmentioning

confidence: 99%

Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

Lee

Son

2022

Nanomaterials

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The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.

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“…17 Although fabrication is advancing to complementary metal-oxide-semiconductor (CMOS) foundry-manufactured devices, 18,19 demonstrations on twodimensional quantum dot arrays have been limited to reaching singleelectron occupancy in up to three dots within a 2 Â 2 array. [20][21][22][23] Reaching simultaneously the single-charge regime with all quantum dots in a two-dimensional array fabricated using CMOS foundry compatible materials remains, thereby, an outstanding challenge.…”

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confidence: 99%

A two-dimensional array of single-hole quantum dots

Riggelen

Hendrickx

Lawrie

et al. 2021

Applied Physics Letters

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Quantum dots fabricated using methods compatible with semiconductor manufacturing are promising for quantum information processing. In order to fully utilize the potential of this platform, scaling quantum dot arrays along two dimensions is a key step. Here, we demonstrate a two-dimensional quantum dot array where each quantum dot is tuned to single-charge occupancy, verified by simultaneous measurements using two integrated radio frequency charge sensors. We achieve this by using planar germanium quantum dots with low disorder and a small effective mass, allowing the incorporation of dedicated barrier gates to control the coupling of the quantum dots. We measure the hole charge filling spectrum and show that we can tune single-hole quantum dots from isolated quantum dots to strongly exchange coupled quantum dots. These results motivate the use of planar germanium quantum dots as building blocks for quantum simulation and computation.

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Charge Detection in an Array of CMOS Quantum Dots

Cited by 63 publications

References 37 publications

Single-electron operations in a foundry-fabricated array of quantum dots

Single-electron operations in a foundry-fabricated array of quantum dots

Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

A two-dimensional array of single-hole quantum dots

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