2002
DOI: 10.1088/0953-8984/14/44/330
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Charge density analysis of SiO2under pressures over 50 GPa using a new diamond anvil cell for single-crystal structure analysis

Abstract: Single-crystal structure analysis of SiO 2 stishovite, (rutile type, P4 2 /mnm z = 2) was carried out using the newly devised diamond anvil cell. The electrondensity distribution was investigated at high pressures up to 50 GPa using synchrotron radiation at SPring-8 and a laboratory x-ray source generator of Ag Kα rotating anode generator. Using large diamond crystal windows instead of beryllium for the cell has several advantages for single-crystal diffraction study supplying the large Q-value.

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Cited by 9 publications
(1 citation statement)
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“…Detailed discussion of the derivation of the core f core and f valence have been described previously. 27 Under ambient conditions, P j,valence and j-parameter are observed from the structure refinement. P Ta,valence , P Mg,valence , O a,valence , j Ta , j Mg , and j O of Ta and Mg are variable parameters in the calculation.…”
Section: A Ta Effective Charges In (Limg)taomentioning
confidence: 99%
“…Detailed discussion of the derivation of the core f core and f valence have been described previously. 27 Under ambient conditions, P j,valence and j-parameter are observed from the structure refinement. P Ta,valence , P Mg,valence , O a,valence , j Ta , j Mg , and j O of Ta and Mg are variable parameters in the calculation.…”
Section: A Ta Effective Charges In (Limg)taomentioning
confidence: 99%