Charge-coupled devices detectors with high quantum efficiency at UV wavelengths

Hamden, Erika; Jewell, April D.; Shapiro, Charles A.; Cheng, Samuel R.; Goodsall, Timothy; Hennessy, John; Hoenk, Michael E.; Jones, Todd J.; Gordon, Samuel; Ong, Hwei Ru; Schiminovich, David; Martin, D. Christopher; Nikzad, Shouleh

doi:10.1117/1.jatis.2.3.036003

Cited by 22 publications

(19 citation statements)

References 23 publications

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“…The quantum yield estimates from both our method and photon transfer are significantly lower than expected from an uncoated silicon interface. 20,21 Table 4 Quantum yield minimums for uncoated silicon using theoretical data by Hamden et al 18 (instead of the real measurements by Hamden et al 19 that we used in Tables 2 and 3) All QY measurements on this device have been lower than predictions from the reflectance of uncoated silicon at 150 nm. This in itself is not surprising but the QY-adjusted quantum efficiency estimates for the CIS113 at 150 nm are higher than should be possible given the reflectance of bare silicon.…”

Section: Discussionmentioning

confidence: 96%

Quantum yield estimation for an electron-multiplying charge-coupled device from photon counting test data

Gleisinger

Rowlands

Scott

et al. 2020

J. Astron. Telesc. Instrum. Syst.

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Electron-multiplying charge-coupled devices (EMCCDs) allow for subelectron effective read noise and thus for imaging at extremely low flux levels. In the ultraviolet, quantum yield creates an additional source of stochastic gain variation, which can be difficult to quantify using existing techniques. We propose a method for measuring the quantum yield gain of these devices, independent of existing methods, using images that are part of the existing test regimen for new EMCCDs. With this method, we were able to recover the quantum yield used to create simulated images within an accuracy of ∼5% and the method provided consistent results with test images after only minor modifications. However, the measured quantum yield remains anomalously low, consistent with other measurements on Teledyne-e2v devices. We hypothesize that this discrepancy is due to lateral transfer of secondary electrons between pixels at the surface explained by the band structure and crystal geometry of typical silicon wafers used in array detector manufacture. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Discussionmentioning

confidence: 96%

Quantum yield estimation for an electron-multiplying charge-coupled device from photon counting test data

Gleisinger

Rowlands

Scott

et al. 2020

J. Astron. Telesc. Instrum. Syst.

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“…It has a line density of 2400 lines/mm and angle of incidence of 28 • . 24 The FB-2 UV EMCCD is provided by the Microdevices Laboratory (MDL) at JPL (PI: S. Nikzad [25][26][27] ) as a part of the FB-2 collaboration. A Teledyne e2v CCD201-20 wafer is thinned and δ-doped using a molecular-beam epitaxy, which grows a single layer of boron-doped silicon.…”

Section: Fireball Science Goals and Instrument Descriptionmentioning

confidence: 99%

“…A 3-layer AR coated was optimized for the FB-2 bandpass, which gave a peak QE∼65% and QE>50% across the bandpass. 25,27 Figure 2. Top, Left: The recovery team found FB-2 on one side the night after the flight.…”

Section: Fireball Science Goals and Instrument Descriptionmentioning

confidence: 99%

The FIREBall-2 UV balloon telescope: 2018 flight and improvements for 2020

Hoadley

Hamden

Milliard

et al. 2019

UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XXI

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The Faint Intergalactic-medium Redshifted Emission Balloon (FIREBall-2, FB-2) is designed to discover and map faint UV emission from the circumgalactic medium around low redshift galaxies (z ∼ 0.3 (C IV); z ∼ 0.7 (Lyα); z ∼ 1.0 (O VI)). FIREBall-2's first launch, on September 22nd 2018 out of Ft. Sumner, NM, was abruptly cut short due to a hole that developed in the balloon. FIREBall-2 was unable to observe above its minimum require altitude (25 km; nominal: 32 km) for its shortest required time (2 hours; nominal: 8+ hours). The shape of the deflated balloon, as well as a concurrent full moon close to our observed target field, revealed a severe, off-axis scattered light path directly to the UV science detector. Additional damage to FB-2 added complications to the ongoing effort to prepare FB-2 for a quick re-floght. Upon landing, several mirrors in the optical chain, including the two large telescope mirrors, were damaged, resulting in chunks of material broken off the sides and reflecting surfaces. The magnifying optical element, called the focal corrector, was discovered to be misaligned beyond tolerance after the 2018 flight, with one of its two mirrors damaged from the landing impact. We describe the steps taken thus far to mitigate the damage to the optics, as well as procedures and results from the ongoing efforts to realign the focal corrector and spectrograph optics. We report the throughput of the spectrograph before and after the 2018 flight and plans for improving it. Finally, we describe several methods by which we address the scattered light issues seen from FIREBall-2's 2018 campaign and present the current status of FB-2 to fly during the summer campaign in Palestine, TX in 2020.

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“…These devices are electron multiplying CCDs with 13 µm pixels in a 1k x 2k format; they are being utilized for variety of FUV imaging and spectroscopy applications at JPL. 26,27 The thinned, back-illuminated devices undergo the 2D-doping process at the wafer scale. 4 Individual devices are isolated following a pad exposure etch process which exposes the wire bond pads from the backside of the wafer prior to dicing.…”

Section: Application To Silicon Imaging Sensors At Fuv Wavelengthsmentioning

confidence: 99%

Materials and process development for the fabrication of far ultraviolet device-integrated filters for visible-blind Si sensors

et al. 2017

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In this work, we show that the direct integration of ultraviolet metal-dielectric filters with Si sensors can improve throughput over external filter approaches, and yield devices with UV quantum efficiencies greater than 50%, with rejection ratios of visible light greater than 10 3 . In order to achieve these efficiencies, two-dimensional doping methods are used to increase the UV sensitivity of back-illuminated Si sensors. Integrated filters are then deposited by a combination of Al evaporation and atomic layer deposition of dielectric spacer layers. At far UV wavelengths these filters require the use of non-absorbing dielectrics, and we have pursued the development of new atomic layer deposition processes for metal fluorides materials of MgF 2 , AlF 3 and LiF. The performance of the complete multilayer filters on Si photodiodes and CCD imaging sensors, and the design and fabrication challenges associated with this development are demonstrated. This includes the continued development of deep diffused silicon avalanche photodiodes designed to detect the fast 220 nm emission component of barium fluoride scintillation crystals, while optically rejecting a slower component at 300 nm.

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Charge-coupled devices detectors with high quantum efficiency at UV wavelengths

Cited by 22 publications

References 23 publications

Quantum yield estimation for an electron-multiplying charge-coupled device from photon counting test data

Quantum yield estimation for an electron-multiplying charge-coupled device from photon counting test data

The FIREBall-2 UV balloon telescope: 2018 flight and improvements for 2020

Materials and process development for the fabrication of far ultraviolet device-integrated filters for visible-blind Si sensors

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