Charge compensation mechanisms in favor of the incorporation of the Eu 3+ ion into the ZnO host lattice

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

“…One or more layers of P atoms are laid on the Si(100) substrate, and the binding energy of Ga-P is much greater than Si-Ga at GaP/Si heterointerface in P-riched sample. According to the calculation, the relative interface formation energy of Si-P binding bond is high, and the binding between P atoms and Si atoms at the interface is unstable [27] . The application of the electron counting model principle to GaP/Si heterointerface suggests that there is an excess of electrons on Si-P bond and a lack of electrons on Si-Ga bond.…”

“…The uncompensated coherent interface is unfavorable to the energy, while the atomic mixture between different valence substances reduces the interface energy [30] . There are Si-P binding bonds, Ga-P binding bonds, and a small amount of Si-Ga binding bonds, leading to intermixing in atomization bonding in some regions [1,27,31] . In contrast, as shown in Fig.…”

Investigations on anticancer activity of Eu3+ doped hydroxyapatite nanocomposites against MCF7 and 4T1 breast cancer cell lines: A structural and luminescence Perspective

“…The local symmetry around the Eu 3+ ion disruption, resulting in the creation of deep states below the empty upper band, known as the conduction band. Another study discusses the use of charge compensator defects in rare-earth-doped phosphors, evaluating three possible mechanisms and their impact on the electronic band structure to enhance the photoluminescence performance of the material for lamp applications [ 59 ]. These deep states can enhance intra-4f shell transitions, ultimately leading to an improvement in the emission intensity of Eu 3+ doped hydroxyapatite nanocomposites.…”

2D Inorganic Framework with Self-Transforming Luminescence Centers for Multicolor Emission

“…Also, a slight distortion of the coordination environment can be observed (Figures b–d). As the partial densities of state (PDOS) shown in Figures e–g, Eu 3+ -4f states are split, and the Eu 2+ -4f states are distinct at different Ca sites, which are caused by the distortion of the coordination environment and the difference in crystal field. Consequently, Eu 3+ -4f and Eu 2+ -4f can introduce various states in the bandgap of Ca 5 (PO 4 ) 3 OH near the Fermi level and enhance the carrier concentration, which are significant for multicolor luminescence.…”

“…). As the partial densities of state (PDOS) shown in Figures 3e−g, Eu 3+ -4f states are split,25 and the Eu 2+ -4f states are distinct at different Ca sites, which are caused by the distortion of the coordination environment and the difference in crystal field. Consequently, Eu 3+ -4f and Eu 2+ -4f can introduce various states in the bandgap of Ca 5 (PO 4 ) 3 OH…”