2015
DOI: 10.1016/j.nima.2015.03.027
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Charge collection in Si detectors irradiated in situ at superfluid helium temperature

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Cited by 11 publications
(9 citation statements)
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“…This work extends the analysis of the experimental data received at CERN [4,5] and is focused on the effect of signal amplification in irradiated Si detectors operating at 1.9 K. The study is based on the previously proposed model of a two-stage charge collection process [6]:…”
Section: Jinst 17 P11037mentioning
confidence: 99%
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“…This work extends the analysis of the experimental data received at CERN [4,5] and is focused on the effect of signal amplification in irradiated Si detectors operating at 1.9 K. The study is based on the previously proposed model of a two-stage charge collection process [6]:…”
Section: Jinst 17 P11037mentioning
confidence: 99%
“…The details of the in situ irradiation test were described in [4,5]. Among the p + -n-n + detectors studied in the test, the sample with a sensitive area of 1 mm 2 processed on 300 μm thick wafer with a resistivity of 10 kΩcm was chosen for the study of charge collection via an analysis of the current pulse response using the tools and approaches of TCT.…”
Section: Samples and Irradiationmentioning
confidence: 99%
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“…• 2012: the first in situ irradiation test (T1) aimed at getting the first data on detector radiation degradation at 1.9 K, and performed with detectors processed on wafers with a standard thickness (d) of 300 µm and different silicon resistivities [8,9];…”
Section: Experimental Samples and Measurement Techniquementioning
confidence: 99%
“…Experimental data on the pulse signal obtained for Si detectors and their analysis along with the treatment of the Q c (F) dependences using the Hecht equation were presented in [28]. It is clear from the results that nonequilibrium carriers generated by spills are captured by the radiation-induced deep level defects and change the electric field profile.…”
Section: Dependences Of the Collected Charge On Bias Voltagementioning
confidence: 99%