Charge Carrier Transport in Organic Semiconductor Composites – Models and Experimental Techniques

Jung, Jarosław; Ulański, Jacek

doi:10.1002/9783527813872.ch6

Cited by 4 publications

(4 citation statements)

References 146 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This means that for voltages higher than U bi , the model assumptions given by Equation (3), are still valid. This compatibility of the experiment with the model also proves that the phenomenon of mobility enhancement due to the density of states filling [40,41] can be neglected, and, as a result, the mobility of charge carriers remains constant.…”

Section: Lumo E [Ev] Homosupporting

confidence: 57%

Electron Transport in Naphthalene Diimide Derivatives

et al. 2021

View full text Add to dashboard Cite

Two naphthalene diimides derivatives containing two different (alkyl and alkoxyphenyl) N-substituents were studied, namely, N,N′-bis(sec-butyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-s-Bu) and N,N′-bis(4-n-hexyloxyphenyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-4-n-OHePh). These compounds are known to exhibit electron transport due to their electron-deficient character evidenced by high electron affinity (EA) values, determined by electrochemical methods and a low-lying lowest unoccupied molecular orbital (LUMO) level, predicted by density functional theory (DFT) calculations. These parameters make the studied organic semiconductors stable in operating conditions and resistant to electron trapping, facilitating, in this manner, electron transport in thin solid layers. Current–voltage characteristics, obtained for the manufactured electron-only devices operating in the low voltage range, yielded mobilities of 4.3 × 10−4 cm2V−1s−1 and 4.6 × 10−6 cm2V−1s−1 for (NDI-s-Bu) and (NDI-4-n-OHePh), respectively. Their electron transport characteristics were described using the drift–diffusion model. The studied organic semiconductors can be considered as excellent candidates for the electron transporting layers in organic photovoltaic cells and light-emitting diodes

show abstract

Section: Lumo E [Ev] Homosupporting

confidence: 57%

Electron Transport in Naphthalene Diimide Derivatives

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Figure 4 clearly shows a decrease in the voltage divide coefficient K along with the resistances R 1 and R 2 , and time constants τ 1 and τ 2 . The reason for the observed drastic changes lie upon the following phenomena: the formation of the recombination interface, its shift towards the middle of the SY layer, enhancement of the mobility due to the density of states filling [ 16 , 17 ], and increasing efficiency of the emissive recombination between the holes and electrons ( Figure 5 b). The resistances R 1 and R 2 decrease due to the increase in the charge carriers density.…”

Section: Resultsmentioning

confidence: 99%

Three Destinies of Solution-Processable Polymer Light-Emitting Diodes under Long-Time Operation

et al. 2021

View full text Add to dashboard Cite

The article describes three different ways of polymer light-emitting diode (PLED) degradation, caused by damage of the protective layer. The electroluminescence and charge-transport properties of a completely encapsulated diode, the diodes with a leaky protective layer and diodes without encapsulation were compared under long-time exploitation. The studied devices incorporated Super Yellow light-emitting poly-(1,4-phenylenevinylene) PPV copolymer as an electroluminescence component, and (poly-(3,4-ethylenedioxythiophene)–poly-(styrene sulfonate) (PEDOT:PSS) as a charge-transport layer between the indium tin oxide (ITO) anode and aluminum–calcium cathode. To analyze the PLED degradation mechanism regarding charge transport, impedance spectroscopy was used. The values of resistance and capacitance of the internal layers revealed an effect of applied voltage on charge carrier injection and recombination. The factors responsible for the device degradation were analyzed on a macromolecular level by comparing the plots of voltage dependence of resistance and capacitance at different operation times elapsed.

show abstract

“…Organic Semiconductors (OS) contain pi-bonded molecules which are made up of carbon and hydrogen atoms [1] and are bound together by van der Waals interactions. Therefore, OS have much lower hole mobility than inorganic semiconductors due to significantly reduced covalent coupling generated by the van der Waals contact [2].…”

Section: Introductionmentioning

confidence: 99%

Unveiling the Doping and Temperature Dependent Properties of Organic Semiconductor Orthorhombic Rubrene from First-Principles

Olowookere,

Adebambo,

Agbaoye

et al. 2024

Preprint

View full text Add to dashboard Cite

Due to its large hole mobility, Organic Rubrene (C42H28) has attracted research questions on its applications in electronic devices. In this work, extensive first-principles calculations were made to predict some temperature and doping dependent properties of Organic Semi- conductor Rubrene. We use Density Functional Theory (DFT) to investigate the electronic structure, elastic and transport properties of the Orthorhombic phase of the Rubrene compound. The calcu- lated band structure shows the Orthorhombic phase has a direct bandgap of 1.26 eV. From the Vickers hardness (1.080 GPa), our calculations show that Orthorhombic Rubrene is not a super hard material and can find useful application as a flexible semicon- ductor. The calculated transport Inverse Effective Mass and Elec- tronic Fitness Function show that the Orthorhombic Rubrene Crystal Structure is a p-type thermoelectric material at high temperatures.

show abstract

Charge Carrier Transport in Organic Semiconductor Composites – Models and Experimental Techniques

Cited by 4 publications

References 146 publications

Electron Transport in Naphthalene Diimide Derivatives

Electron Transport in Naphthalene Diimide Derivatives

Three Destinies of Solution-Processable Polymer Light-Emitting Diodes under Long-Time Operation

Unveiling the Doping and Temperature Dependent Properties of Organic Semiconductor Orthorhombic Rubrene from First-Principles

Contact Info

Product

Resources

About