Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Prudaev, I. А.; Verkholetov, Maksim G.; Koroleva, A. D.; Толбанов, О. П.

doi:10.1134/s106378501806007x

Cited by 14 publications

(8 citation statements)

References 9 publications

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“…It is known that it decreases due to the capture of avalanche holes by negatively charged iron centers. [ 9,10 ] This is indicated by the value of the current density in the local breakdown region (Figure 5), which is 0.01–0.1 A cm −2 (effective recharging in Fe‐doped GaAs begins already at 1–10 mA cm −2 ). [ 9,10 ] It should be noted that during the avalanche breakdown holes are injected toward the n 0 ‐layer that has, within the microplasma channel, a high concentration of negatively charged deep Fe centers (more than N D = 6 × 10 16 cm −3 ).…”

Section: Discussionmentioning

confidence: 99%

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Prudaev

Kopyev

Oleinik

2023

Physica Status Solidi (b)

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The article reports investigations into the microplasma breakdown in GaAs‐based avalanche S‐diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a reverse I–V curve with “soft” avalanche breakdown. It proposes 2D single microplasma models and calculates I–V curves of diodes with a deep impurity during microplasma breakdown. By comparing experimental and calculation data, authors propose an explanation for the effect of current limitation during avalanche breakdown. The effect is associated with capture of avalanche holes at negatively charged Fe centers, which enhances the depletion region and minimizes the maximum electric field in a reverse‐biased p–n junction of an S‐diode.

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Section: Discussionmentioning

confidence: 99%

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Prudaev

Kopyev

Oleinik

2023

Physica Status Solidi (b)

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“…An avalanche S-diode refers to a semiconductor closing switch with an S-type current-voltage characteristic. Earlier a switching mechanism of the said device was supposedly attributed to the generation of collapsing field domains (CFDs) in an avalanche regime [8], [9]. The CFD phenomenon has been found from physics-based numerical and experimental studies of superfast switching transient in powerfully avalanching GaAs bipolar transistors [5]- [7] and claims to explain superfast switching in all GaAs devices discussed in the literature over the past 30 years.…”

Section: Introductionmentioning

confidence: 99%

Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity

Prudaev

Vainshtein

Verkholetov

et al. 2021

IEEE Trans. Electron Devices

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The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are simulated in a simplified generator. The dynamic electric field and charge profiles in the structures are calculated. This article describes an impact that Fe capture cross sections of free charge carriers have on delayed switching. The simulation results show that delayed switching is associated with deep center recharging in a double injection mode due to three different processes. There are two different delay mechanisms to be herewith distinguished. A delay effect is experimentally viewed to control the dynamic switching voltage (and the avalanche breakdown voltage) using constant voltage adjustment capability enabled by a triggering circuit supply. The authors demonstrate the way it is possible to adjust the amplitude of current nanosecond pulses in the range of 20-45 A through a lidar transmitter circuit with a semiconductor laser and nonoptimized S-diode. The findings are consistent with the results of numerical simulation.

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“…The appearance of ionizing domains of this type was first predicted in GaAs avalanche transistors [7] and is possible at ultrahigh current density (J ∼ 1 MA/cm 2 ), which is achieved due to the current localization in narrow channels [7]. The mechanism of the conducting state in GaAs S diodes, explained for many years by the re-charge of deep sites [1,2], was revised in recent years and is also related to collapsing domains [8][9][10].…”

mentioning

confidence: 97%

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

A.V.

M.S.

P.B.

2022

Technical Physics Letters

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It is experimentally established that high-voltage GaAs diodes maintain conducting state with low residual voltage after switching to the conducting state in the delayed impact-ionization mode. The duration of the constant current in the reversely-biased structure is determined by the duration of the applied rectangular voltage pulse (up to 100 ns) and significantly exceeds drift extraction and recombination times. The discovered effect of self-supporting conducting state resembles the "lock-on" effect in optically activated GaAs semiconductor switches and S-diodes with deep centers. The effect can be explained by shock ionization in narrow collapsing Gann domains. Keywords: high-voltage GaAs diodes, "lock-on" effect.

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Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Cited by 14 publications

References 9 publications

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

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