2008
DOI: 10.1016/j.orgel.2008.06.007
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Charge carrier mobility and lifetime of organic bulk heterojunctions analyzed by impedance spectroscopy

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Cited by 542 publications
(404 citation statements)
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“…We utilised capacitance-voltage measurements in the dark to determine the degree to which a depletion region is present in the active layer. Capacitance-voltage measurements are an established technique used to determine the doping density of a semiconductor 6,19,29,38,[41][42][43] . The width of the space-charge region is probed by a variation of the DC voltage and is detected by measuring the capacitance of the device as a function of the DC voltage.…”
Section: Resultsmentioning
confidence: 99%
“…We utilised capacitance-voltage measurements in the dark to determine the degree to which a depletion region is present in the active layer. Capacitance-voltage measurements are an established technique used to determine the doping density of a semiconductor 6,19,29,38,[41][42][43] . The width of the space-charge region is probed by a variation of the DC voltage and is detected by measuring the capacitance of the device as a function of the DC voltage.…”
Section: Resultsmentioning
confidence: 99%
“…(2) should be taken with caution because the series resistance potential drop is only a useful approximation of a rather complex picture concerning the Fermi level distribution across the active layer thickness [17]. In general terms transport mechanisms are coupled with charge storage and recombination (represented by  C and rec R ) in a transmission line circuit model [9], instead of the circuit comprising lumped elements as in Fig. 3(c).…”
Section: Resultsmentioning
confidence: 99%
“…It has been also proposed that the effect of mechanisms in series is observable at high frequencies through more featured impedance spectra, which were interpreted in connection with electronic transport processes [9]. Very recently impedance analysis has been employed by others groups identifying a RC parallel subcircuit governing the high frequency response as a combination of bulk transport resistance and geometrical capacitance [10,11].…”
Section: Usually Smentioning
confidence: 99%
“…It is well known that P3HT is a conjugated polymer that in exposure to oxygen [3], or moisture [4] results p-doped exhibiting relatively high levels of free carries ( 17 15 10 10  cm -3 ) [5]. Under such conditions, it has been suggested that the P3HT-metal contact forms a Schottky barrier behavior: band bending with a corresponding majority-carrier depletion zone made up at the cathode contact [6,7], due to the presence of acceptor defects (see Fig. 1).…”
Section: Introductionmentioning
confidence: 99%