Charge buildup at high dose and low fields in SIMOX buried oxides

Boesch, H. E.; Taylor, Thomas L.; Brown, George

doi:10.1109/23.124098

Cited by 33 publications

(15 citation statements)

References 13 publications

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“…Trap sites are located in the volume of the buried oxide, and trapping is determined by built-in field and space charge effects as dose increases [9].…”

Section: B Inj7uence Of Gate Lengthmentioning

confidence: 99%

Worst-case bias during total dose irradiation of SOI transistors

Ferlet-Cavrois

Colladant

Paillet

et al. 2000

IEEE Trans. Nucl. Sci.

124

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“…Trap sites are located in the volume of the buried oxide, and trapping is determined by built-in field and space charge effects as dose increases [9].…”

Section: B Inj7uence Of Gate Lengthmentioning

confidence: 99%

Worst-case bias during total dose irradiation of SOI transistors

Ferlet-Cavrois

Colladant

Paillet

et al. 2000

IEEE Trans. Nucl. Sci.

124

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“…While the electrons are swept away rapidly in the external electric field, the holes move slowly along the direction of the field. Some of the holes are trapped by the neutral traps, and become oxide-trapped charges that made the V,, shift toward a negative direction [6,9,10]. But when Ft ions are implanted into the SO1 material, because of their strong affinity, they will easily combine with the neutral traps in the buried S O z .…”

Section: Resultsmentioning

confidence: 99%

A modification of formulas used in SOI capacitors analysis and its application in total dose radiation

Gao¹,

Zhang

et al. 1998

Radiation Effects and Defects in Solids

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The capacitance-voltage (C-V ) technique used to characterize the irradiation response of separation by implantation of oxygen (SlMOX) material was improved and then used in the analysis of the total-dose radiation effects of the silicon on insulator (SOI) capacitors.The capacitor samples were made up by using the etch-back technique to pull off several layers of fluorine ions ( Ft ) implanted and non-implanted SIMOX materials. According to the results of deconvolution of C-V data of those samples, after irradiation, it indicated that the tolerance of SIMOX materials to total dose radiation was improved by F+ ions implanted into the buried SiO, layer.

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“…Indeed, Boesch et al have shown that the radiation response of typical thick buried oxide layers is governed primarily by space-charge buildup and low-field recombination processes, at doses above a few tens of krads(Si) and under moderate electric fields [22]. This process is responsible for the highly sublinear dose dependence of the midgap voltage shift and high levels of interface trapping.…”

Section: Discussionmentioning

confidence: 98%

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

Barchuk¹,

Kilchitskaya

Lysenko

et al. 1997

IEEE Trans. Nucl. Sci.

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In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMRtechnique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique.

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Charge buildup at high dose and low fields in SIMOX buried oxides

Cited by 33 publications

References 13 publications

Worst-case bias during total dose irradiation of SOI transistors

Worst-case bias during total dose irradiation of SOI transistors

A modification of formulas used in SOI capacitors analysis and its application in total dose radiation

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

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