2015 IEEE International Integrated Reliability Workshop (IIRW) 2015
DOI: 10.1109/iirw.2015.7437084
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Charge-based stochastic aging analysis of CMOS circuits

Abstract: Scaled down CMOS transistors are prone to degra dation and process variation. This necessitates a transistor model that provides an insight into the internal dependencies between these two crucial effects. Models for modern transistors and their degradation behavior are hardly attachable. This paper proposes a modified BSIM6 model which includes degradation due to BTl and HCI and in addition process variations. The application of this method is demonstrated on the basis of a single MOSFET and an inverter stage… Show more

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Cited by 3 publications
(1 citation statement)
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“…2. The functional identification of a Dickson charge pump should be focused on measuring the different parameters of the output signal for the selected stimuli [18]- [20]. In this research, the following functional parameters of the circuit being tested were analysed [18], [19], [21]:…”
Section: A Circuit Under Testmentioning
confidence: 99%
“…2. The functional identification of a Dickson charge pump should be focused on measuring the different parameters of the output signal for the selected stimuli [18]- [20]. In this research, the following functional parameters of the circuit being tested were analysed [18], [19], [21]:…”
Section: A Circuit Under Testmentioning
confidence: 99%