Charge Accumulation at InAs Surfaces

Olsson, Louise; Andersson, C B M; Håkansson, M.C.; Kanski, J.; Ilver, L.; Karlsson, Ulf O.

doi:10.1103/physrevlett.76.3626

Cited by 285 publications

(244 citation statements)

References 15 publications

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“…The band bending was estimated to be 115 meV, with a triangular potential well width of 140 Å, this gives a surface charge density of 6.3Ϯ2.0ϫ10 11 cm Ϫ2 . This is in good agreement with the values of 10 11 -10 12 cm Ϫ2 found on other faces of InAs 17,18 and on hydrogen terminated InAs͑110͒. 19 The spatial dispersion coefficient for the simulations was calculated using the random phase approximation ͑RPA͒, which gives a value of 0.43ϫ10 6 ms Ϫ1 and successfully reproduces the observed plasmon peak dispersion in the experimental spectra.…”

Section: Controlled Oxide Removal For the Preparation Of Damage-freesupporting

confidence: 69%

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Veal

McConville

2000

Applied Physics Letters

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Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process.

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Section: Controlled Oxide Removal For the Preparation Of Damage-freesupporting

confidence: 69%

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Veal

McConville

2000

Applied Physics Letters

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“…This work builds on the large body of literature related to terahertz emission from InAs. [5][6][7]11,13,20,21 We have observed a temperature-induced polarity reversal of the terahertz radiation from both p-InMnAs and n-InMnAs, in contrast to what has been previously observed in p-InAs. 6,7 We attribute the observed polarity reversal of the terahertz radiation to the competition between two oppositely directed sources of photoinduced current: the surface-fieldinduced current and the photo-Dember effect.…”

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confidence: 51%

Temperature dependence of terahertz emission from InMnAs

Zhan

Deibel

Laib

et al. 2007

Applied Physics Letters

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We have studied the terahertz radiation emitted by the dilute magnetic semiconductor InMnAs under femtosecond laser illumination, as a function of temperature. We observe a reversal of the polarity of the emitted terahertz field as the temperature is decreased, in both p-type and n-type materials. This effect is not observed in p-InAs. A competition between two oppositely directed currents, the photo-Dember current and the surface-field-induced current, can explain the observed polarity reversal. In contrast to nonmagnetic materials, these two currents are of comparable magnitude because the Mn impurity substantially reduces the carrier mobility in dilute magnetic semiconductors.

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“…These study results also could be illustrated by surface band bending, as shown in Figure 2b. InAs has been found to have accumulated electrons on surface and causes downward surface band bending 76, 77, 78. For InAs NW with limited diameter, when under photoexcitation, photogenerated electrons move to the surface and are trapped whereas holes are left in the core and recombine with free electrons, leading to the NPC.…”

Section: Trap‐ and Hybrid‐induced Photogatingmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

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Charge Accumulation at InAs Surfaces

Cited by 285 publications

References 15 publications

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Temperature dependence of terahertz emission from InMnAs

Photogating in Low Dimensional Photodetectors

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