2015
DOI: 10.1021/nn5059216
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Characterizing the Metal–SAM Interface in Tunneling Junctions

Abstract: This paper investigates the influence of the interface between a gold or silver metal electrode and an n-alkyl SAM (supported on that electrode) on the rate of charge transport across junctions with structure Met(Au or Ag) TS /A(CH 2 ) n H//Ga 2 O 3 /EGaIn by comparing measurements of current density, J(V), for Met/AR = Au/thiolate (Au/SR), Ag/thiolate (Ag/SR), Ag/carboxylate (Ag/O 2 CR),and Au/acetylene (Au/CtCR), where R is an n-alkyl group. Values of J 0 and β (from the Simmons equation) were indistinguisha… Show more

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Cited by 42 publications
(87 citation statements)
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“…Since the value of J 0 reflects the characteristics of the interfaces between the SAM and the electrodes, rather than the shape of the most insulating part of the tunneling barrier, significant differences in values of injection current densities, J 0 , and indistinguishable values of tunneling decay, β, for SAMs of n-alkanethiolates with n odd and n even imply that the odd−even effect is influenced by some property of the interfaces (e.g., Au/S or SAM//Ga 2 O 3 ). We suggest that a determining contribution of the SAM//Ga 2 O 3 interface to odd−even effects is more plausible than one for the Au/S interface for two reasons: (i) Our previous studies, 10,47 and the current study (Figure 4a), showed that changing the bottom interface does not significantly influence the tunneling current densities. (ii) Results of this study indicate that changing the terminal group from CH 3 to CH 2 CH 3 correlates with a change in the injection current density (Figures 2b and 4b).…”
Section: ■ Conclusionmentioning
confidence: 72%
“…Since the value of J 0 reflects the characteristics of the interfaces between the SAM and the electrodes, rather than the shape of the most insulating part of the tunneling barrier, significant differences in values of injection current densities, J 0 , and indistinguishable values of tunneling decay, β, for SAMs of n-alkanethiolates with n odd and n even imply that the odd−even effect is influenced by some property of the interfaces (e.g., Au/S or SAM//Ga 2 O 3 ). We suggest that a determining contribution of the SAM//Ga 2 O 3 interface to odd−even effects is more plausible than one for the Au/S interface for two reasons: (i) Our previous studies, 10,47 and the current study (Figure 4a), showed that changing the bottom interface does not significantly influence the tunneling current densities. (ii) Results of this study indicate that changing the terminal group from CH 3 to CH 2 CH 3 correlates with a change in the injection current density (Figures 2b and 4b).…”
Section: ■ Conclusionmentioning
confidence: 72%
“…Changes to the interface that cause a disruption in the delocalization of the HOMO appear to raise the height of the barrier at the interface, inducing an increase in β. The interesting trend that is emerging from these and related studies 5,48 is that the introduction of groups that decreases the strength of the interactions, and thus increases the height of the barrier, at either interface increases β and increases J 0 .…”
Section: V) Error Associated With the Extrapolation Of The Best Fit Lmentioning
confidence: 75%
“…Our previous investigations on the influence of the Metal/SAM interface on rates of charge transport considered alkyl-based SAMs having different anchoring groups (e.g., S, C≡C, and O 2 C). 11,48 This study suggested-based on indistinguishable values of β and J 0 -that the interface between the metal and the SAM was not important in determining rates of charge transport. The current study analyzes conjugated molecular systems where the HOMO extends beyond the anchoring group and onto the phenyl rings.…”
Section: V) Error Associated With the Extrapolation Of The Best Fit Lmentioning
confidence: 94%
“…(19) SAMs on template-stripped gold (Au TS ) were prepared according to protocols reported previously. (18,25) Detailed surface analyses indicate that SAMs of Cys(Gly) n are ordered:…”
mentioning
confidence: 99%