Characterizing the defects and ferromagnetism in metal oxides: The case of magnesium oxide

Crystalline Orientation-Dependent Ferromagnetism in N+-Implanted MgO Single Crystal

“…The N a can be obviously assigned to α-N 2 [ 27 ]. Referring to the literature [ 14 ], the N b peak can be ascribed to N-related defects. Noticeably, the relative peak area of N b increases from (110) through (100) to the (111) orientation, and the value is 41%, 56.8%, and 62.1%, respectively.…”

“…Magnesium oxide (MgO) is considered to be a promising material in the field of spintronic devices due to its wide band gap, optical behavior, and multilevel switching characteristics [ 14 ]. Therefore, MgO single crystals have been intensively studied in the past decade in terms of spintronic devices.…”

“…Eugene Kotomin et al [ 21 ] revealed that the defect migration parameters have fluence-dependent characteristics through a systematic literature analysis. Additionally, research studies have demonstrated that ion implantation is a feasible approach to obtain ferromagnetism in MgO [ 14 ].…”

Study of the magnetism of C-doped MgO based on first-principles calculations and the Ising model

“…31 Regardless of Cdoped or N-doped MgO, it is the result of a delicate interplay between Hund's coupling, hybridization and Jahn-Teller distortion, and the dopant creates a localized magnetic moment and leaves the whole system in a half-metallic ferromagnetic state. [31][32][33][34][35][36][37][38] Even in undoped MgO thin films, the ferromagnetism was also found in experiments at room temperature, and the magnetization in the MgO matrix is believed to be defect induced. 39 The Ising model is widely used in exploring the underlying physics behind phase transitions and the magnetism of materials.…”

Structural, optical, and magnetic properties of Ag+, Mn+ and Ar+ ions implanted ZnO thin films: effect of implantation dose and stopping energy

“…[15][16][17][18][19][20][21][22] It is further shown that defects are required to induce magnetism in these oxides. 23,24 Thus, to understand such a phenomenon, it is necessary to investigate the effect of defects on the ferromagnetic properties of ZnO thin lms by intentionally creating external defects.…”